Local partial densities of states in CuInS2 upper valence band determined by soft-x-ray emission spectroscopy: Evidence for In 5p contribution

2005 ◽  
Vol 98 (1) ◽  
pp. 013704 ◽  
Author(s):  
L. Zhang ◽  
I. Konovalov ◽  
D. Wett ◽  
D. Schulze ◽  
R. Szargan ◽  
...  
1993 ◽  
Vol 32 (Part 2, No. 4B) ◽  
pp. L597-L600 ◽  
Author(s):  
Satoshi Kawamoto ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Hatsuo Nakamura ◽  
Motohiro Iwami ◽  
...  

1991 ◽  
Vol 30 (Part 1, No. 9A) ◽  
pp. 1928-1930 ◽  
Author(s):  
Hirokuni Watabe ◽  
Motohiro Iwami ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Hatsuo Nakamura

1998 ◽  
Vol 67 (1) ◽  
pp. 230-233 ◽  
Author(s):  
Jinliang Wang ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami

1974 ◽  
Vol 9 (2) ◽  
pp. 600-621 ◽  
Author(s):  
L. Ley ◽  
R. A. Pollak ◽  
F. R. McFeely ◽  
S. P. Kowalczyk ◽  
D. A. Shirley

2011 ◽  
Vol 110-116 ◽  
pp. 2188-2193 ◽  
Author(s):  
V.V. Atuchin ◽  
I.B. Troitskaia ◽  
O.Yu. Khyzhun ◽  
V.L. Bekenev ◽  
Yu.M. Solonin

— The electronic structure of hexagonal WO3 and triclinic CuWO4 nanocrystals, prospective materials for renewable energy production and functional devices, has been studied using the X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) methods. The present XPS and XES results render that the W 5d-and O 2p-like states contribute throughout the whole valence-band region of the h-WO3 and CuWO4 nanocrystalline materialls, however maximum contributions of the O 2p-like states occur in the upper, whilst the W 5d-like states in the lower portions of the valence band, respectively.


1993 ◽  
Vol 320 ◽  
Author(s):  
H. Watabe ◽  
M. Iwami ◽  
M. Hirai ◽  
M. Kusaka ◽  
H. Nakamura ◽  
...  

ABSTRACTSi L2,3 valence band soft x-ray emission spectrum (SXES) due to an e ectron excitation for silicides shows a clear modification from that for Si single crystal. Using this fact in combination with the incident angle variation(IAV) device, a non-destructive in-depth analysis of a Au(thin film)-Si(lll) contact is successfully carried out. Also, the SXES method has clarified the fact that a fair amount of the Si-s valence band density of state (yB-DOS) is included in the upper part of the yB-DOS for a Au-Si alloy, or Au-silicide, due to the Au-Si bond formation, which is a clear contrast to proposals given so far.


1990 ◽  
Vol 29 (Part 1, No. 10) ◽  
pp. 2014-2016 ◽  
Author(s):  
Nansheng Zhou ◽  
Masaaki Hirai ◽  
Masahiko Kusaka ◽  
Motohiro Iwami ◽  
Hatsuo Nakamura

Sign in / Sign up

Export Citation Format

Share Document