Theory of the channel-width dependence of the low-temperature hole mobility in Ge-rich narrow squareSi∕SiGe∕Siquantum wells

2007 ◽  
Vol 75 (7) ◽  
Author(s):  
Doan Nhat Quang ◽  
Nguyen Huyen Tung ◽  
Do Thi Hien ◽  
Huynh Anh Huy
Keyword(s):  
Low Temperature ◽  
Hole Mobility ◽  
Channel Width

Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility

2000 ◽  
Vol 369 (1-2) ◽  
pp. 320-323 ◽  
Author(s):  
Tetsuji Ueno ◽  
Toshifumi Irisawa ◽  
Yasuhiro Shiraki ◽  
Akira Uedono ◽  
Shoichiro Tanigawa
Keyword(s):  
Low Temperature ◽  
Hole Mobility

Microfluidic Devices Fabricated by LTCC Combined with Thick Film Lithography

2009 ◽  
Vol 74 ◽  
pp. 303-306
Author(s):  
Young Joon Yoon ◽  
Jae Kyung Choi ◽  
Jong Woo Lim ◽  
Hyo Tae Kim ◽  
Ji Hoon Kim ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Low Temperature ◽  
Thick Film ◽  
Microfluidic Devices ◽  
Channel Width ◽  
Simulation Data ◽  
Passive Mixers

Low temperature co-fired ceramic (LTCC) process combined with thick film photolithography was employed to fabricate ceramic-based microfluidic devices. To check the applicability of novel process, three types of passive mixers, diffusion-driven T-type mixers with different channel width and convection-driven chaotic mixer, were fabricated and their microfluidic performance was evaluated. It was confirmed that the degree of mixing in ceramic-based microfluidic passive mixers was well matched with the numerical simulation data.

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