Low temperature hole mobility in strained p-Si/Si1−xGex/p-Si selectively doped double heterojunctions

1998 ◽  
Vol 24 (1) ◽  
pp. 33-40 ◽  
Author(s):  
G. Hionis ◽  
G.P. Triberis
Keyword(s):  
Low Temperature ◽  
Hole Mobility ◽  
Double Heterojunctions

Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility

2000 ◽  
Vol 369 (1-2) ◽  
pp. 320-323 ◽  
Author(s):  
Tetsuji Ueno ◽  
Toshifumi Irisawa ◽  
Yasuhiro Shiraki ◽  
Akira Uedono ◽  
Shoichiro Tanigawa
Keyword(s):  
Low Temperature ◽  
Hole Mobility

Low - Temperature Defect - Induced Aging of GaAs Grown by Molecular Beam Epitaxy

1990 ◽  
Vol 184 ◽  
Author(s):  
I. Szafranek ◽  
S. A. Stockman ◽  
M. Szafranek ◽  
M. J. McCollum ◽  
M. A. Plano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Variable Temperature ◽  
High Mobility ◽  
Hole Mobility ◽  
Acceptor Pair ◽  
Hall Effect Measurements ◽  
One Year ◽  
P Type

ABSTRACTDegradation in optical and electrical properties has been observed for high-purity and high-mobility p-type GaAs layers which contain significant concentrations of an unidentified shallow acceptor-like defect, labeled “A”, that is frequently incorporated in crystals grown by molecular beam epitaxy. Low-temperature photoluminescence and variable temperature Hall-effect measurements were employed to monitor the aging process in samples stored for about one year at room temperature. Profound changes in the exciton recombination spectra, indicative of increasing concentration of the “A” defect, have been accompanied by a decrease in hole mobility and an increase in carrier concentration. These results are discussed in the context of the acceptor-pair defect model, originally proposed by Eaves and Halliday [J. Phys. C: Solid State Phys. 17, L705 (1984)].

scholarly journals Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si0.7Ge0.3 Tri-Gate pMOSFETs

2017 ◽  
Vol 834 ◽  
pp. 012001
Author(s):  
R. Laviéville ◽  
C. Le Royer ◽  
S. Barraud ◽  
G. Ghibaudo
Keyword(s):  
Low Temperature ◽  
Hole Mobility ◽  
Gate Length
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