Band Structure of the Four Pentacene Polymorphs and Effect on the Hole Mobility at Low Temperature

2005 ◽  
Vol 109 (5) ◽  
pp. 1849-1856 ◽  
Author(s):  
Alessandro Troisi ◽  
Giorgio Orlandi
Keyword(s):  
Low Temperature ◽  
Band Structure ◽  
Hole Mobility

scholarly journals Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

2014 ◽  
Vol 116 (23) ◽  
pp. 235701 ◽  
Author(s):  
H. Tanaka ◽  
S. Mori ◽  
N. Morioka ◽  
J. Suda ◽  
T. Kimoto
Keyword(s):  
Band Structure ◽  
Hole Mobility ◽  
Cross Sectional ◽  
Germanium Nanowires

Low Temperature Magnetotransport Properties of Polycrystalline Ca3Co4O9

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1237-1242
Author(s):  
David J. Magginetti ◽  
Shrikant Saini ◽  
Ashutosh Tiwari
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Band Structure ◽  
Density Wave ◽  
Spin Density Wave ◽  
Significant Component ◽  
Resistivity Measurements ◽  
Metal To Insulator Transition ◽  
Conventional Behavior ◽  
Physical Features

ABSTRACTCa3Co4O9 (CCO) is a promising material for thermoelectric applications; however, this layered oxide shows a large number of physical features that complicate understanding and systematically improving its properties. A significant component of CCO’s behavior is its magnetotransport properties, particularly in the low temperature region where an incommensurate spin density wave affects its band structure. In order to improve understanding in this area, we perform low temperature magnetoresistance (MR) measurements on a bulk CCO sample. Field-less resistivity measurements confirm the conventional behavior of our sample, with a metal-to-insulator transition at approximately 70 K, and a shoulder indicating ferrimagnetism at 14 K. Resistivity vs. temperature under applied magnetic field show significant MR below around 35 K.

Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility

2000 ◽  
Vol 369 (1-2) ◽  
pp. 320-323 ◽  
Author(s):  
Tetsuji Ueno ◽  
Toshifumi Irisawa ◽  
Yasuhiro Shiraki ◽  
Akira Uedono ◽  
Shoichiro Tanigawa
Keyword(s):  
Low Temperature ◽  
Hole Mobility

scholarly journals Broadband optical ultrafast reflectivity of Si, Ge and GaAs

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Di Cicco ◽  
G. Polzoni ◽  
R. Gunnella ◽  
A. Trapananti ◽  
M. Minicucci ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Structure ◽  
Density Of States ◽  
Silicon Germanium ◽  
Ultrafast Optical ◽  
Reflectivity Spectra ◽  
Recovery Times ◽  
Subpicosecond Pulses ◽  
Set Up ◽  
Probe Measurements

Abstract Ultrafast optical reflectivity measurements of silicon, germanium, and gallium arsenide have been carried out using an advanced set-up providing intense subpicosecond pulses (35 fs FWHM, $$\lambda $$ λ = 400 nm) as a pump and broadband 340–780 nm ultrafast pulses as a white supercontinuum probe. Measurements have been performed for selected pump fluence conditions below the damage thresholds, that were carefully characterized. The obtained fluence damage thresholds are 30, 20.8, 9.6 mJ/$$\hbox {cm}^2$$ cm 2 for Si, Ge and GaAs respectively. Ultrafast reflectivity patterns show clear differences in the Si, Ge, and GaAs trends both for the wavelength and time dependences. Important changes were observed near the wavelength regions corresponding to the $$E_1$$ E 1 , $$E_1+\Delta $$ E 1 + Δ singularities in the joint density of states, so related to the peculiar band structure of the three systems. For Ge, ultrafast reflectivity spectra were also collected at low temperature (down to 80 K) showing a shift of the characteristic doublet peak around 2.23 eV and a reduction of the recovery times.

Sign in / Sign up

Export Citation Format

Share Document