Dissociation of H-related defect complexes in Mg-doped GaN

2004 ◽  
Vol 69 (12) ◽  
Author(s):  
O. Gelhausen ◽  
M. R. Phillips ◽  
E. M. Goldys ◽  
T. Paskova ◽  
B. Monemar ◽  
...  
Keyword(s):  
Defect Complexes ◽  
Related Defect ◽  
Mg Doped

scholarly journals Defect Complexes in Highly Mg-Doped GaN Studied by Raman Spectroscopy

1999 ◽  
Vol 216 (1) ◽  
pp. 551-555 ◽  
Author(s):  
A. Kaschner ◽  
G. Kaczmarczyk ◽  
A. Hoffmann ◽  
C. Thomsen ◽  
U. Birkle ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Defect Complexes ◽  
Mg Doped

Hydrogen in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Low Temperatures ◽  
Atomic Hydrogen ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Surface Damage ◽  
Defect Complexes ◽  
Microscopic Models ◽  
Related Defect ◽  
Shallow Acceptors ◽  
Technological Interest

ABSTRACTThe ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest. Recent results on the deactivation of the shallow acceptors in Si are compared with similar experiments in other semiconductors, microscopic models are proposed, and the implications for the states of hydrogen in the Si lattice at a variety of temperatures, and the diffusivity of some of these different states, is discussed. New results on the migration of atomic hydrogen under electronic stimulation are also detailed, along with a compendium of the deep levels in Si passivated by reaction with hydrogen. Surface damage by hydrogen-containing plasmas, and the infrared and electrical properties of H-related defect complexes are also reviewed.

Gas-phase anion exchange towards ZnO/ZnSe heterostructures with intensive visible light emission

2014 ◽  
Vol 2 (15) ◽  
pp. 2793-2798 ◽  
Author(s):  
Yan Wang ◽  
Meng-Xia Liu ◽  
Tao Ling ◽  
Cheng-Chun Tang ◽  
Chun-Yi Zhi ◽  
...  
Keyword(s):  
Visible Light ◽  
Gas Phase ◽  
Anion Exchange ◽  
Light Emission ◽  
Zno Nanorods ◽  
Defect Complexes ◽  
Related Defect ◽  
Visible Light Emission

Gas-phase anion exchange was employed to convert ZnO nanorods into a ZnO/ZnSe heterostructure or pure ZnSe nanorods. The product showed intensive visible light emission, which was attributed to the VZn-related defect complexes in the ZnO core.

Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaN

2001 ◽  
Vol 692 ◽  
Author(s):  
M. O. Manasreh ◽  
B. D. Weaver
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Vibrational Modes ◽  
Defect Complexes ◽  
Maximum Value ◽  
Annealing Effects ◽  
Mocvd Technique ◽  
Subsequent Diffusion ◽  
Mg Doped

AbstractThermal annealing effects on carbon-hydrogen (C-H) complexes defects in AlGaN grown on sapphire by metalorganic chemical vapor deposition (MOCVD) technique have been investigated using Fourier transform infrared spectroscopy (FTIR). The CH complexes in AlGaN, formed either during growth or by proton irradiation, exhibit five local vibrational modes (LVMs) due to the symmetric and asymmetric vibrational stretching modes of C-H in CHn (n=1–;3) defect complexes. It was found that the annealing temperature (Ta) of 500°C is sufficient enough to dissociate most of the C-H complexes in AlGaN samples. A turning point annealing temperature is found around 300°C for un-irradiated Mg-doped sample, below which the total integrated area of the C-H LVMs continued to increase with increasing annealing temperature and reach the maximum value around 300°C. At Ta > 300°C, the total integrated area of the C-H LVMs starts to decrease and the C-H complexes seem to be completely depleted at Ta > 600°C. The depleted C-H LVMs were observed to partially recover after thermal annealing at Ta > 500°C and waiting for aging periods of several days. This recovery behavior is explained in terms of the hydrogen being remained inside the crystal after the dissociation of C-H complexes, subsequent diffusion and recombining again with carbon atom to reform C-H complexes.

Hydrogen related defect complexes in ZnO nanoparticles

2010 ◽  
Vol 97 (9) ◽  
pp. 091907 ◽  
Author(s):  
K. Senthilkumar ◽  
M. Tokunaga ◽  
H. Okamoto ◽  
O. Senthilkumar ◽  
Y. Fujita
Keyword(s):  
Zno Nanoparticles ◽  
Defect Complexes ◽  
Related Defect

Lithium–gold‐related defect complexes inn‐type crystalline silicon

1995 ◽  
Vol 77 (7) ◽  
pp. 3146-3154 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
Sigurgeir Kristjansson ◽  
Haflidi P. Gislason
Keyword(s):  
Crystalline Silicon ◽  
Defect Complexes ◽  
Related Defect

Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin films

2000 ◽  
Vol 639 ◽  
Author(s):  
J. Chen ◽  
Q. Zhou ◽  
Y. Berhane ◽  
M. O. Manasreh ◽  
C. A. Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Vibrational Modes ◽  
Spectroscopy Technique ◽  
Defect Complexes ◽  
Localized Vibrational Modes ◽  
Metalorganic Chemical ◽  
Mg Doped

ABSTRACTLocalized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm−1 for undoped, Si- and Mg-doped samples. These peaks are related to CH, CH2, and CH3 defect complexes, respectively. It is also observed that the frequencies and intensities of the localized vibrational modes are sample dependent.

scholarly journals Extended Defects in GaN: a Theoretical Study

1999 ◽  
Vol 4 (S1) ◽  
pp. 250-256 ◽  
Author(s):  
J. Elsner ◽  
Th. Frauenheim ◽  
M. Haugk ◽  
R. Gutierrez ◽  
R. Jones ◽  
...  
Keyword(s):  
Density Functional ◽  
Extended Defects ◽  
Functional Theory ◽  
Screw Dislocations ◽  
Defect Complexes ◽  
Oxygen Related Defect ◽  
Domain Boundaries ◽  
Related Defect ◽  
Image Position ◽  
Edge Dislocations

We present density–functional theory studies for a variety of surfaces and extended defects in GaN. According to previous theoretical studies1{100} type surfaces are electrically inactive. They play an important role in GaN since similar configurations occur at open–core screw dislocations and nanopipes as well as at the core of threading edge dislocations. Domain boundaries are found to consist of four–fold coordinated atoms and are also found to be electrically inactive. Thus, except for full–core screw dislocations which possess heavily strained bonds all investigated extended defects do not induce deep states into the band–gap. However, electrically active impurities in particular gallium vacancies and oxygen related defect complexes are found to be trapped at the stress field of the extended defects.

H-related defect complexes in HfO2: A model for positive fixed charge defects

2004 ◽  
Vol 84 (19) ◽  
pp. 3894-3896 ◽  
Author(s):  
Joongoo Kang ◽  
E.-C. Lee ◽  
K. J. Chang ◽  
Young-Gu Jin
Keyword(s):  
Fixed Charge ◽  
Defect Complexes ◽  
Related Defect

scholarly journals Theoretical study of Cl-related defect complexes in cubic SiC

2012 ◽  
Vol 111 (10) ◽  
pp. 103705 ◽  
Author(s):  
G. Alfieri ◽  
T. Kimoto
Keyword(s):  
Theoretical Study ◽  
Defect Complexes ◽  
Related Defect
Sign in / Sign up

Export Citation Format

Share Document