Hydrogen in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Low Temperatures ◽  
Atomic Hydrogen ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Surface Damage ◽  
Defect Complexes ◽  
Microscopic Models ◽  
Related Defect ◽  
Shallow Acceptors ◽  
Technological Interest

ABSTRACTThe ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest. Recent results on the deactivation of the shallow acceptors in Si are compared with similar experiments in other semiconductors, microscopic models are proposed, and the implications for the states of hydrogen in the Si lattice at a variety of temperatures, and the diffusivity of some of these different states, is discussed. New results on the migration of atomic hydrogen under electronic stimulation are also detailed, along with a compendium of the deep levels in Si passivated by reaction with hydrogen. Surface damage by hydrogen-containing plasmas, and the infrared and electrical properties of H-related defect complexes are also reviewed.

Lithium–gold‐related defect complexes inn‐type crystalline silicon

1995 ◽  
Vol 77 (7) ◽  
pp. 3146-3154 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
Sigurgeir Kristjansson ◽  
Haflidi P. Gislason
Keyword(s):  
Crystalline Silicon ◽  
Defect Complexes ◽  
Related Defect

The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen

1989 ◽  
Vol 6-7 ◽  
pp. 341-342
Author(s):  
Sergei V. Koveshnikov ◽  
S.V. Nosenko ◽  
Eugene B. Yakimov
Keyword(s):  
Atomic Hydrogen ◽  
Deep Level ◽  
Deep Level Defect ◽  
Defect Passivation

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Oxygen Stoichiometry and the High Tc Superconducting Oxides

MRS Bulletin ◽  
1989 ◽  
Vol 14 (1) ◽  
pp. 53-57 ◽  
Author(s):  
J-M. Tarascon ◽  
B.G. Bagley
Keyword(s):  
Optical Properties ◽  
Liquid Nitrogen ◽  
Broad Spectrum ◽  
Low Temperatures ◽  
Large Family ◽  
Oxygen Stoichiometry ◽  
High Tc ◽  
Metallic Conductivity ◽  
Superconducting Oxides ◽  
Technological Interest

Oxide compounds have been extensively studied through the years because they exhibit a broad spectrum of electrical, magnetic, and optical properties providing both scientific and technological interest. Most oxides are insulators, but a few of them (e.g., LiTi2O4 or BaPb1−x BixO3 show metallic conductivity and even superconductivity at low temperatures. The discovery of superconductivity at 35 K by Bednorz and Müller in the cuprate La-Ba-Cu-O system prompted the search for other high Tc compounds among this oxide family. Superconductivity above liquid nitrogen was then rapidly achieved with the Y-Ba-Cu-O system (Tc=90 K) and subsequently, with the Bi-Sr-Ca-Bu-O and Tl-Ba-Ca-Cu-O systems, Tc was raised to 110 K and then 125 K.A common feature of these new high Tc cuprates is that they belong to the large family of materials, termed perovskites, which have been studied over the years because of their ability to absorb or lose oxygen reversibly (i.e., for their nonstoichiometry in oxygen). It had been previously established in the field of superconductivity that Tc is extremely sensitive to compositional stoichiometry.

scholarly journals Bulk stress due to surface damage of crystalline silicon and germanium

2001 ◽  
Vol 79 (21) ◽  
pp. 3458-3460 ◽  
Author(s):  
P. Fisher ◽  
R. E. M. Vickers
Keyword(s):  
Crystalline Silicon ◽  
Surface Damage ◽  
Bulk Stress ◽  
Silicon And Germanium

Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]

2015 ◽  
Vol 117 (1) ◽  
pp. 019901 ◽  
Author(s):  
P. M. Mooney ◽  
K. P. Watkins ◽  
Zenan Jiang ◽  
A. F. Basile ◽  
R. B. Lewis ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Deep Level

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Reaction of atomic hydrogen with crystalline silicon

1989 ◽  
Vol 209 (3) ◽  
pp. 291-313 ◽  
Author(s):  
J. Abrefah ◽  
D.R. Olander
Keyword(s):  
Atomic Hydrogen ◽  
Crystalline Silicon

Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

1982 ◽  
Vol 74 (1) ◽  
pp. 329-341 ◽  
Author(s):  
T. S. Shi ◽  
S. N. Sahu ◽  
G. S. Oehrlein ◽  
A. Hiraki ◽  
J. W. Corbett
Keyword(s):  
Crystalline Silicon ◽  
Related Defect
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