Hydrogen related defect complexes in ZnO nanoparticles

2010 ◽  
Vol 97 (9) ◽  
pp. 091907 ◽  
Author(s):  
K. Senthilkumar ◽  
M. Tokunaga ◽  
H. Okamoto ◽  
O. Senthilkumar ◽  
Y. Fujita
Keyword(s):  
Zno Nanoparticles ◽  
Defect Complexes ◽  
Related Defect

Hydrogen in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Low Temperatures ◽  
Atomic Hydrogen ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Surface Damage ◽  
Defect Complexes ◽  
Microscopic Models ◽  
Related Defect ◽  
Shallow Acceptors ◽  
Technological Interest

ABSTRACTThe ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest. Recent results on the deactivation of the shallow acceptors in Si are compared with similar experiments in other semiconductors, microscopic models are proposed, and the implications for the states of hydrogen in the Si lattice at a variety of temperatures, and the diffusivity of some of these different states, is discussed. New results on the migration of atomic hydrogen under electronic stimulation are also detailed, along with a compendium of the deep levels in Si passivated by reaction with hydrogen. Surface damage by hydrogen-containing plasmas, and the infrared and electrical properties of H-related defect complexes are also reviewed.

Gas-phase anion exchange towards ZnO/ZnSe heterostructures with intensive visible light emission

2014 ◽  
Vol 2 (15) ◽  
pp. 2793-2798 ◽  
Author(s):  
Yan Wang ◽  
Meng-Xia Liu ◽  
Tao Ling ◽  
Cheng-Chun Tang ◽  
Chun-Yi Zhi ◽  
...  
Keyword(s):  
Visible Light ◽  
Gas Phase ◽  
Anion Exchange ◽  
Light Emission ◽  
Zno Nanorods ◽  
Defect Complexes ◽  
Related Defect ◽  
Visible Light Emission

Gas-phase anion exchange was employed to convert ZnO nanorods into a ZnO/ZnSe heterostructure or pure ZnSe nanorods. The product showed intensive visible light emission, which was attributed to the VZn-related defect complexes in the ZnO core.

Dissociation of H-related defect complexes in Mg-doped GaN

2004 ◽  
Vol 69 (12) ◽  
Author(s):  
O. Gelhausen ◽  
M. R. Phillips ◽  
E. M. Goldys ◽  
T. Paskova ◽  
B. Monemar ◽  
...  
Keyword(s):  
Defect Complexes ◽  
Related Defect ◽  
Mg Doped

Lithium–gold‐related defect complexes inn‐type crystalline silicon

1995 ◽  
Vol 77 (7) ◽  
pp. 3146-3154 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
Sigurgeir Kristjansson ◽  
Haflidi P. Gislason
Keyword(s):  
Crystalline Silicon ◽  
Defect Complexes ◽  
Related Defect

scholarly journals Extended Defects in GaN: a Theoretical Study

1999 ◽  
Vol 4 (S1) ◽  
pp. 250-256 ◽  
Author(s):  
J. Elsner ◽  
Th. Frauenheim ◽  
M. Haugk ◽  
R. Gutierrez ◽  
R. Jones ◽  
...  
Keyword(s):  
Density Functional ◽  
Extended Defects ◽  
Functional Theory ◽  
Screw Dislocations ◽  
Defect Complexes ◽  
Oxygen Related Defect ◽  
Domain Boundaries ◽  
Related Defect ◽  
Image Position ◽  
Edge Dislocations

We present density–functional theory studies for a variety of surfaces and extended defects in GaN. According to previous theoretical studies1{100} type surfaces are electrically inactive. They play an important role in GaN since similar configurations occur at open–core screw dislocations and nanopipes as well as at the core of threading edge dislocations. Domain boundaries are found to consist of four–fold coordinated atoms and are also found to be electrically inactive. Thus, except for full–core screw dislocations which possess heavily strained bonds all investigated extended defects do not induce deep states into the band–gap. However, electrically active impurities in particular gallium vacancies and oxygen related defect complexes are found to be trapped at the stress field of the extended defects.

H-related defect complexes in HfO2: A model for positive fixed charge defects

2004 ◽  
Vol 84 (19) ◽  
pp. 3894-3896 ◽  
Author(s):  
Joongoo Kang ◽  
E.-C. Lee ◽  
K. J. Chang ◽  
Young-Gu Jin
Keyword(s):  
Fixed Charge ◽  
Defect Complexes ◽  
Related Defect

scholarly journals Theoretical study of Cl-related defect complexes in cubic SiC

2012 ◽  
Vol 111 (10) ◽  
pp. 103705 ◽  
Author(s):  
G. Alfieri ◽  
T. Kimoto
Keyword(s):  
Theoretical Study ◽  
Defect Complexes ◽  
Related Defect

lithium-gold-related defect complexes in n-type silicon

1994 ◽  
Vol T54 ◽  
pp. 12-15 ◽  
Author(s):  
Einar Ö Sveinbjörnsson ◽  
Sigurgeir Kristjánsson ◽  
Haflidi P Gislason
Keyword(s):  
Defect Complexes ◽  
Type Silicon ◽  
Related Defect

Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study

2016 ◽  
Vol 858 ◽  
pp. 257-260 ◽  
Author(s):  
Jonathon Cottom ◽  
Gernot Gruber ◽  
Gregor Pobegen ◽  
Thomas Aichinger ◽  
Alexander L. Shluger
Keyword(s):  
Silicon Carbide ◽  
Fermi Level ◽  
Energy Charge ◽  
High Energy ◽  
Paramagnetic Resonance ◽  
Defect Complexes ◽  
Significant Damage ◽  
Wide Range ◽  
Related Defect ◽  
Charge States

Dopant implantation is a high energy process which causes a significant damage to the crystal lattice and is usually accompanied by a post implantation anneal to repair the structure. Defects created in these processes may also persist in fully processed devices. Previous electron paramagnetic resonance (EPR) and EDMR studies have identified a series of nitrogen related defect complexes in N implanted silicon carbide (SiC) wafers.[1–3] This study examines the formation energy, charge transition levels and barriers to interconversion of two such defects: NCVSi and the NSiVC. The NCVSi center is favoured in a variety of charge states for a wide range of Fermi level positions. We found, however, that for Fermi level positions close to the valence band of 4H-SiC the NCVSi center is a favoured conformation with barriers to rearrangement of +1.2 eV and +3.8 eV in the neutral and +2 charge states, respectively.

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