Magnetoelastic coupling in thin films with weak out-of-plane anisotropy

2003 ◽  
Vol 67 (2) ◽  
Author(s):  
M. Ciria ◽  
J. I. Arnaudas ◽  
L. Benito ◽  
C. de la Fuente ◽  
A. del Moral ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetoelastic Coupling ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Stability of in-plane and out-of-plane chiral skyrmions in epitaxial MnSi(111)/Si(111) thin films: Surface twists versus easy-plane anisotropy

2020 ◽  
Vol 102 (17) ◽  
Author(s):  
Andrey O. Leonov ◽  
Ivan M. Tambovtcev ◽  
Igor S. Lobanov ◽  
Valery M. Uzdin
Keyword(s):  
Thin Films ◽  
Easy Plane ◽  
Plane Anisotropy ◽  
Out Of Plane

Thickness and Temperature Dependent Out-of-Plane Anisotropy of Amorphous CoSiB Thin Films

2018 ◽  
Vol 255 (8) ◽  
pp. 1800041 ◽  
Author(s):  
Yu Zhang ◽  
San-Sheng Wang ◽  
Fang Li ◽  
Wen Jiang ◽  
Zhu-Li Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependent ◽  
Plane Anisotropy ◽  
Out Of Plane

Pinning-assisted out-of-plane anisotropy in reverse stack FeCo/FePt intermetallic bilayers for controlled switching in spintronics

2021 ◽  
pp. 160249
Author(s):  
Garima Vashisht ◽  
Utkarsh Shashank ◽  
Surbhi Gupta ◽  
Rohit Medwal ◽  
C.L. Dong ◽  
...  
Keyword(s):  
Controlled Switching ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Structural characterization of laser ablated epitaxial (Ba0.5Sr0.5)TiO3 thin films on MgO(001) by synchrotron x-ray scattering

1999 ◽  
Vol 14 (7) ◽  
pp. 2905-2911 ◽  
Author(s):  
Sangsub Kim ◽  
Tae Soo Kang ◽  
Jung Ho Je
Keyword(s):  
Thin Films ◽  
Early Stage ◽  
Lattice Parameter ◽  
Normal Direction ◽  
X Ray ◽  
X Ray Scattering ◽  
Surface Normal ◽  
Out Of Plane ◽  
Axis Parallel ◽  
Ray Scattering

Epitaxial (Ba0.5Sr0.5) TiO3 thin films of two different thickness (∼25 and ∼134 nm) on MgO(001) prepared by a pulsed laser deposition method were studied by synchrotron x-ray scattering measurements. The film grew initially with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became significantly rougher, but the interface between the film and the substrate did not. In the early stage of growth, the film was highly strained in a tetragonal structure (c/a = 1.04) with the longer axis parallel to the surface normal direction. As the growth proceeded further, it relaxed to a cubic structure with the lattice parameter near the bulk value, and the mosaic distribution improved significantly in both in- and out-of-plane directions. The thinner film (∼25 nm) showed only one domain limited mainly by the film thickness, but the thicker film (∼134 nm) exhibited three domains along the surface normal direction.

scholarly journals Origin of perpendicular magnetic anisotropy in amorphous thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Functional Materials ◽  
Spin Reorientation ◽  
Amorphous Films ◽  
Amorphous Thin Films ◽  
Magnetic Performance ◽  
Out Of Plane ◽  
Sputtering Pressure

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.

In-Plane Anisotropy In CoCr(Ta,Pt)/Cr Films Deposited onto Substrates with Controlled Topography

1998 ◽  
Vol 517 ◽  
Author(s):  
D.J. Twisselmann ◽  
B.T. Adekor ◽  
M. Farhoud ◽  
Henry I. Smith ◽  
P.C. Dorsey ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Bilayer Films ◽  
Interferometric Lithography ◽  
Plane Anisotropy ◽  
Silica Substrates

AbstractIn-plane magnetic anisotropy can be induced in Cr-underlayer/Co-alloy thin films by grooves or scratches in the substrate. To quantify this effect, silica substrates have been prepared with large areas of submicron grooves using interferometric lithography. The growth of Cr films and Cr/Co-alloy bilayer films on these substrates has been investigated, and in-plane magnetic anisotropy has been observed.

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