Exchange coupled bilayer thin films with tilted out-of-plane anisotropy easy axis

2012 ◽  
Vol 112 (7) ◽  
pp. 073901 ◽  
Author(s):  
A. Layadi
Keyword(s):  
Thin Films ◽  
Easy Axis ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Stability of in-plane and out-of-plane chiral skyrmions in epitaxial MnSi(111)/Si(111) thin films: Surface twists versus easy-plane anisotropy

2020 ◽  
Vol 102 (17) ◽  
Author(s):  
Andrey O. Leonov ◽  
Ivan M. Tambovtcev ◽  
Igor S. Lobanov ◽  
Valery M. Uzdin
Keyword(s):  
Thin Films ◽  
Easy Plane ◽  
Plane Anisotropy ◽  
Out Of Plane

Magnetoelastic coupling in thin films with weak out-of-plane anisotropy

2003 ◽  
Vol 67 (2) ◽  
Author(s):  
M. Ciria ◽  
J. I. Arnaudas ◽  
L. Benito ◽  
C. de la Fuente ◽  
A. del Moral ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetoelastic Coupling ◽  
Plane Anisotropy ◽  
Out Of Plane

Magnetic anisotropy, sress, and martensitic transformation in Ni-Mn-Ga thin films on Si(100) wafer

2007 ◽  
Vol 998 ◽  
Author(s):  
Michael Hagler ◽  
Volodymyr A. Chernenko ◽  
Makoto Ohtsuka ◽  
Stefano Besseghini ◽  
Peter M¨llner
Keyword(s):  
Thin Films ◽  
Martensitic Transformation ◽  
Shape Memory ◽  
Easy Axis ◽  
Magnetic Shape Memory ◽  
Magnetic Shape Memory Alloys ◽  
Out Of Plane ◽  
Curvature Measurements ◽  
Sputter Deposited ◽  
Magnetization Behavior

ABSTRACTNi-Mn-Ga magnetic shape memory alloys (MSMAs) tend to undergo a large deformation upon the application of a magnetic field. This deformation is attributed to twin boundary motion in the martensitic phase. In an effort to harness the shape memory effect for use in sensors, actuators, and micro-devices, the behavior of Ni-Mn-Ga thin films is attracting attention. Substrate curvature measurements were done with Ni-Mn-Ga films with a thickness of 2.0 μm sputter-deposited on Si(100) wafer having amorphous 500 nm thick SiNx buffer layer. During the wafer bow curvature measurements, stress levels of 0.65 GPa were attained. The martensitic transformation is manifested by a stress-temperature hysteretic loop. Measurements of magnetization curves were carried out on Ni-Mn-Ga films with thickness between 0.5 and 3.0 μm. A change of the magnetization behavior from the easy-plane type for thin films to the out-of-plane easy-axis type for thick films is observed. This effect is caused by the interplay between different contributions to the overall anisotropy of film.

Thickness and Temperature Dependent Out-of-Plane Anisotropy of Amorphous CoSiB Thin Films

2018 ◽  
Vol 255 (8) ◽  
pp. 1800041 ◽  
Author(s):  
Yu Zhang ◽  
San-Sheng Wang ◽  
Fang Li ◽  
Wen Jiang ◽  
Zhu-Li Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependent ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1−xKx(Zn1−yMny)2As2

AIP Advances ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 045017 ◽  
Author(s):  
R. Wang ◽  
Z. X. Huang ◽  
G. Q. Zhao ◽  
S. Yu ◽  
Z. Deng ◽  
...  
Keyword(s):  
Thin Films ◽  
Easy Axis ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Out Of Plane ◽  
Diluted Magnetic

Pinning-assisted out-of-plane anisotropy in reverse stack FeCo/FePt intermetallic bilayers for controlled switching in spintronics

2021 ◽  
pp. 160249
Author(s):  
Garima Vashisht ◽  
Utkarsh Shashank ◽  
Surbhi Gupta ◽  
Rohit Medwal ◽  
C.L. Dong ◽  
...  
Keyword(s):  
Controlled Switching ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

CORRELATIONS BETWEEN STRUCTURE AND MAGNETISM IN THIN FILMS AND NANOSTRUCTURES

1999 ◽  
Vol 06 (05) ◽  
pp. 753-761 ◽  
Author(s):  
P. LE FÈVRE ◽  
H. MAGNAN ◽  
A. MIDOIR ◽  
D. CHANDESRIS ◽  
H. JAFFRÈS ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Structural Relaxation ◽  
Easy Axis ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Films ◽  
Bulk Solids ◽  
Thin Magnetic Films ◽  
Distorted Structure ◽  
Crystallographic Structures

The bidimensionnal character of thin magnetic films deposited on single-crystal substrates, together with the occurrence of singular crystallographic structures, often confer on these systems electronic properties that cannot be found in bulk solids. For example, thin Ni layers deposited on Cu(001) present a perpendicular magnetic anisotropy in a very wide thickness range. We will show that this can be explained by a distorted structure of Ni, originating from the strain induced by the epitaxy on the Cu substrate. In this field of 2D magnetism, nanostructures are now investigated. Thin Fe layers on MgO(001) were cut into stripes by the "atomic saw" method: a compression of the substrate induces a dislocation slipping which saws both the substrate and the Fe film in regular and separated ribbons. The observed perpendicular to the stripes magnetization easy axis will be explained by a structural relaxation occurring during the structuration process. In these two studies, a precise structural characterization and simple magnetoelastic models allow one to describe the magnetic behaviors of these systems.

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