scholarly journals Stability of in-plane and out-of-plane chiral skyrmions in epitaxial MnSi(111)/Si(111) thin films: Surface twists versus easy-plane anisotropy

2020 ◽  
Vol 102 (17) ◽  
Author(s):  
Andrey O. Leonov ◽  
Ivan M. Tambovtcev ◽  
Igor S. Lobanov ◽  
Valery M. Uzdin
Keyword(s):  
Thin Films ◽  
Easy Plane ◽  
Plane Anisotropy ◽  
Out Of Plane

Magnetoelastic coupling in thin films with weak out-of-plane anisotropy

2003 ◽  
Vol 67 (2) ◽  
Author(s):  
M. Ciria ◽  
J. I. Arnaudas ◽  
L. Benito ◽  
C. de la Fuente ◽  
A. del Moral ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetoelastic Coupling ◽  
Plane Anisotropy ◽  
Out Of Plane

Thickness and Temperature Dependent Out-of-Plane Anisotropy of Amorphous CoSiB Thin Films

2018 ◽  
Vol 255 (8) ◽  
pp. 1800041 ◽  
Author(s):  
Yu Zhang ◽  
San-Sheng Wang ◽  
Fang Li ◽  
Wen Jiang ◽  
Zhu-Li Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependent ◽  
Plane Anisotropy ◽  
Out Of Plane

High-field soft-x-ray dichroism of a hard ferrimagnet with easy-plane anisotropy

2021 ◽  
Vol 104 (6) ◽  
Author(s):  
Sh. Yamamoto ◽  
D. I. Gorbunov ◽  
I. F. Diaz-Ortega ◽  
A. Miyata ◽  
T. Kihara ◽  
...  
Keyword(s):  
High Field ◽  
Easy Plane ◽  
X Ray ◽  
Plane Anisotropy

Pinning-assisted out-of-plane anisotropy in reverse stack FeCo/FePt intermetallic bilayers for controlled switching in spintronics

2021 ◽  
pp. 160249
Author(s):  
Garima Vashisht ◽  
Utkarsh Shashank ◽  
Surbhi Gupta ◽  
Rohit Medwal ◽  
C.L. Dong ◽  
...  
Keyword(s):  
Controlled Switching ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

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