Internal distortion in ceria-doped hafnia solid solutions: High-resolution x-ray diffraction and Raman scattering

2001 ◽  
Vol 64 (13) ◽  
Author(s):  
Hirotaka Fujimori ◽  
Masatomo Yashima ◽  
Satoshi Sasaki ◽  
Masato Kakihana ◽  
Takeharu Mori ◽  
...  
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Solid Solutions ◽  
X Ray Diffraction ◽  
X Ray

High Resolution X-Ray Diffraction and Raman Scattering Studies of Cubic-Phase InN Films Grown by MBE

2008 ◽  
Vol 55-57 ◽  
pp. 773-776 ◽  
Author(s):  
S. Kuntharin ◽  
S. Sanorpim ◽  
Hiroyuki Yaguchi ◽  
Y. Iwahashi ◽  
M. Orihara ◽  
...  
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray

X-ray diffraction and Raman scattering investigations on Ba[Mg(1−x)/3ZrxTa2(1−x)/3]O3 solid solutions

2014 ◽  
Vol 587 ◽  
pp. 717-723 ◽  
Author(s):  
Han Zhang ◽  
Chuanling Diao ◽  
Shulian Liu ◽  
Shouzhen Jiang ◽  
Feng Shi ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Solid Solutions ◽  
X Ray Diffraction ◽  
X Ray

High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 52575-52582 ◽  
Author(s):  
H. F. Liu ◽  
Y. J. Jin ◽  
C. G. Li ◽  
S. B. Dolmanan ◽  
S. Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Raman Scattering ◽  
Cross Section ◽  
X Ray Diffraction ◽  
X Ray

Ga-doped Ge thin films grown on GaAs (001) substrates have been studied and compared with unintentionally doped Ge film by using HRXRD and Raman scattering in both surface and cross-section configurations.

A study of as-grown, poled and reduced Rh-doped KNbO3 single crystals by high-resolution X-ray diffraction, Raman scattering, photoluminescence and dielectric measurements

2014 ◽  
Vol 47 (4) ◽  
pp. 1324-1328 ◽  
Author(s):  
G. Bhagavannarayana ◽  
A. Choubey ◽  
S. K. Kushwaha ◽  
S. N. Sharma ◽  
R. Rani ◽  
...  
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Single Crystals ◽  
Chemical Reduction ◽  
Great Influence ◽  
Excess Oxygen ◽  
X Ray Diffraction ◽  
High Concentration ◽  
Crystalline Perfection ◽  
X Ray

As-grown and chemically reduced Rh-doped (1500 p.p.m.) KnbO3 single crystals grown by the Czochralski method have been characterized. Reduction of the grown crystals at different levels was carried out under a mixture of CO and CO2 gases as the crystals were grown with excess oxygen. The effect of reduction and poling on crystalline perfection was studied by high-resolution X-ray diffraction (HRXRD) using a multi-crystal X-ray diffractometer developed in-house. The diffraction curves of the as-grown, electrically poled, moderately reduced and heavily reduced single-crystal specimens show remarkable differences. The studies by HRXRD reveal that poling has some influence on the improvement of crystalline perfection, while chemical reduction has a great influence on crystalline perfection; at moderate reduction the crystal becomes nearly perfect, but when the reduction is very heavy the crystal quality decreases slightly, although it is still better than for unreduced samples. Asymmetry of the diffraction curves with respect to the peak position reveals that the as-grown specimens contain a high concentration of both vacancies and self-interstitials. After poling, the concentration of self-interstitial defects is lowered to some extent. When the specimen is moderately chemically reduced, the scattered intensity on both sides of the peak is greatly reduced, showing that the concentrations of both vacancies and interstitials are reduced to a great extent owing to chemical reduction. This clearly indicates that, as a result of the chemical reduction of oxygen in the crystal, crystalline perfection is enhanced significantly. However, under heavy chemical reduction, the number of vacancy defects is increased to a significant extent. Raman scattering, dielectric and photoluminescence studies also show interesting features, with excellent correlation with the degree of crystalline perfection influenced by the processes of reduction and poling.

Cubic–tetragonal phase change of yttria-doped hafnia solid solution: high-resolution X-ray diffraction and Raman scattering

2001 ◽  
Vol 346 (3-4) ◽  
pp. 217-223 ◽  
Author(s):  
Hirotaka Fujimori ◽  
Masatomo Yashima ◽  
Satoshi Sasaki ◽  
Masato Kakihana ◽  
Takeharu Mori ◽  
...  
Keyword(s):  
Solid Solution ◽  
High Resolution ◽  
Raman Scattering ◽  
Phase Change ◽  
Tetragonal Phase ◽  
X Ray Diffraction ◽  
X Ray

Internal distortion in ZrO2–CeO2 solid solutions: Neutron and high-resolution synchrotron x-ray diffraction study

1998 ◽  
Vol 72 (2) ◽  
pp. 182-184 ◽  
Author(s):  
Masatomo Yashima ◽  
Satoshi Sasaki ◽  
Yasuo Yamaguchi ◽  
Masato Kakihana ◽  
Masahiro Yoshimura ◽  
...  
Keyword(s):  
High Resolution ◽  
Diffraction Study ◽  
Solid Solutions ◽  
X Ray Diffraction ◽  
X Ray

Fullerene Superconductors: Effects of Molecular Orientation and Valence

1994 ◽  
Vol 359 ◽  
Author(s):  
T. Yildirim ◽  
L. Barbedette ◽  
K. KniaŹ ◽  
J. E. Fischer ◽  
C. L. Lin ◽  
...  
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Long Range ◽  
Molecular Orientation ◽  
Alkaline Earth ◽  
X Ray Diffraction ◽  
Cubic Symmetry ◽  
X Ray ◽  
Mixed Alkali ◽  
Theoretical Predictions

ABSTRACTWe report results of high-resolution x-ray diffraction, dc magnetometry and Raman scattering on the quaternary alkali and ternary mixed alkali-alkaline earth fullerene compounds Na2RbxCs1−x C60 (0 < x < 1) and Rb3−δ BaδC60 (δ ∼ 0.4 and 2.0). These have the same cubic space lattices as K3C60 and Rb3C60 however the former exhibit long-range orientational correlations with Pa3 symmetry and the latter have N > 3 delocalized electrons per molecule. We show that the dependence of Tc on lattice constant is much steeper for the ordered as compared to the merohedrally disordered phases with N = 3, and that within the constraint of cubic symmetry Tc decreases significantly with increasing N > 3, in disagreement with some theoretical predictions.

Investigation of indium distribution in InGaAs∕GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering

2006 ◽  
Vol 99 (2) ◽  
pp. 023517 ◽  
Author(s):  
Yu. I. Mazur ◽  
Zh. M. Wang ◽  
G. J. Salamo ◽  
V. V. Strelchuk ◽  
V. P. Kladko ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Dot ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Quantum Dot

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

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