Characterization of interfacial structure of InGaAs/InP short‐period superlattices by high resolution x‐ray diffraction and Raman scattering

1995 ◽  
Vol 77 (4) ◽  
pp. 1492-1497 ◽  
Author(s):  
Teruo Mozume
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Interfacial Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices

Characterization of Interfacial Structure of InGaAs/InP Short Period Superlattices by Raman Scattering and High Resolution X-Ray Diffraction

1993 ◽  
Vol 324 ◽  
Author(s):  
Teruo Mozume
Keyword(s):  
Raman Scattering ◽  
Long Range ◽  
Range Order ◽  
Interfacial Structure ◽  
Long Range Order ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gas Source ◽  
Short Period ◽  
Short Period Superlattices

AbstractThe x-ray diffraction (XRD) of InGaAs/InP short-period superlattices (SPSL's) grown on (001)InP substrates by gas source molecular beam epitaxy (GSMBE) and by gas source migration enhanced epitaxy (GSMEE) shows that the GSMBE grown SPSL is strain free, and that GSMEE grown SPSL's with InGa-P and In-As heterointerfaces have strain-induced zerothorder satellite peak shift consistent with that in simulation results for the InGaAs/InP SPSL with one monolayer of InGaP and InAs inserted in each interface. Partial destruction of the long-range order is confirmed by the observation of the extra diffraction peak in GSMBE grown SPSL and by weak intensity of satellite peaks and nonuniform spacing between satellite peaks in GSMEE grown SPSL's. Raman scattering shows that the strain is accommodated in the interface layer in GSMEE grown samples. A confinement model without interface disorder fits the GaAs LO phonon very well. These results indicate that the local atomic arrangements are tailored by GSMEE, but that long range-order is impaired by the misfit dislocations in GSMEE grown SPSL's and by the exchange between As to P at the interfaces in GSMBE grown SPSL.

scholarly journals High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

1993 ◽  
Vol 84 (3) ◽  
pp. 475-489
Author(s):  
G. Bauer ◽  
E. Koppensteiner ◽  
P. Hamberger ◽  
J. Nützel ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

scholarly journals High-resolution characterization of the forbidden Si 200 and Si 222 reflections

2015 ◽  
Vol 48 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Peter Zaumseil
Keyword(s):  
High Resolution ◽  
Angular Range ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
Diffraction Plane ◽  
X Ray ◽  
Sample Orientation ◽  
Plane Sample

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

High Resolution X-Ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1997 ◽  
pp. 439-448 ◽  
Author(s):  
A. Sanz-Hervás ◽  
C. Villar ◽  
M. Aguilar ◽  
A. Sacedón ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray
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