Fullerene Superconductors: Effects of Molecular Orientation and Valence

1994 ◽  
Vol 359 ◽  
Author(s):  
T. Yildirim ◽  
L. Barbedette ◽  
K. KniaŹ ◽  
J. E. Fischer ◽  
C. L. Lin ◽  
...  

ABSTRACTWe report results of high-resolution x-ray diffraction, dc magnetometry and Raman scattering on the quaternary alkali and ternary mixed alkali-alkaline earth fullerene compounds Na2RbxCs1−x C60 (0 < x < 1) and Rb3−δ BaδC60 (δ ∼ 0.4 and 2.0). These have the same cubic space lattices as K3C60 and Rb3C60 however the former exhibit long-range orientational correlations with Pa3 symmetry and the latter have N > 3 delocalized electrons per molecule. We show that the dependence of Tc on lattice constant is much steeper for the ordered as compared to the merohedrally disordered phases with N = 3, and that within the constraint of cubic symmetry Tc decreases significantly with increasing N > 3, in disagreement with some theoretical predictions.

1998 ◽  
Vol 224 (2) ◽  
pp. 153-162 ◽  
Author(s):  
Uwe Hoppe ◽  
Günter Walter ◽  
Rainer Kranold ◽  
Dörte Stachel ◽  
Andrea Barz

2008 ◽  
Vol 23 (2) ◽  
pp. 174-174
Author(s):  
T. A. Ulyanenkova ◽  
T. Baumbach ◽  
A. I. Benediktovich ◽  
I. Feranchuk ◽  
A. Ulyanenkov

2001 ◽  
Vol 64 (13) ◽  
Author(s):  
Hirotaka Fujimori ◽  
Masatomo Yashima ◽  
Satoshi Sasaki ◽  
Masato Kakihana ◽  
Takeharu Mori ◽  
...  

2008 ◽  
Vol 77 (17) ◽  
Author(s):  
T. A. Alexeeva ◽  
A. I. Benediktovich ◽  
I. D. Feranchuk ◽  
T. Baumbach ◽  
A. Ulyanenkov

2002 ◽  
Vol 88 (20) ◽  
Author(s):  
A. V. Petukhov ◽  
D. G. A. L. Aarts ◽  
I. P. Dolbnya ◽  
E. H. A. de Hoog ◽  
K. Kassapidou ◽  
...  

2008 ◽  
Vol 55-57 ◽  
pp. 773-776 ◽  
Author(s):  
S. Kuntharin ◽  
S. Sanorpim ◽  
Hiroyuki Yaguchi ◽  
Y. Iwahashi ◽  
M. Orihara ◽  
...  

1993 ◽  
Vol 324 ◽  
Author(s):  
Teruo Mozume

AbstractThe x-ray diffraction (XRD) of InGaAs/InP short-period superlattices (SPSL's) grown on (001)InP substrates by gas source molecular beam epitaxy (GSMBE) and by gas source migration enhanced epitaxy (GSMEE) shows that the GSMBE grown SPSL is strain free, and that GSMEE grown SPSL's with InGa-P and In-As heterointerfaces have strain-induced zerothorder satellite peak shift consistent with that in simulation results for the InGaAs/InP SPSL with one monolayer of InGaP and InAs inserted in each interface. Partial destruction of the long-range order is confirmed by the observation of the extra diffraction peak in GSMBE grown SPSL and by weak intensity of satellite peaks and nonuniform spacing between satellite peaks in GSMEE grown SPSL's. Raman scattering shows that the strain is accommodated in the interface layer in GSMEE grown samples. A confinement model without interface disorder fits the GaAs LO phonon very well. These results indicate that the local atomic arrangements are tailored by GSMEE, but that long range-order is impaired by the misfit dislocations in GSMEE grown SPSL's and by the exchange between As to P at the interfaces in GSMBE grown SPSL.


RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 52575-52582 ◽  
Author(s):  
H. F. Liu ◽  
Y. J. Jin ◽  
C. G. Li ◽  
S. B. Dolmanan ◽  
S. Guo ◽  
...  

Ga-doped Ge thin films grown on GaAs (001) substrates have been studied and compared with unintentionally doped Ge film by using HRXRD and Raman scattering in both surface and cross-section configurations.


2014 ◽  
Vol 47 (4) ◽  
pp. 1324-1328 ◽  
Author(s):  
G. Bhagavannarayana ◽  
A. Choubey ◽  
S. K. Kushwaha ◽  
S. N. Sharma ◽  
R. Rani ◽  
...  

As-grown and chemically reduced Rh-doped (1500 p.p.m.) KnbO3 single crystals grown by the Czochralski method have been characterized. Reduction of the grown crystals at different levels was carried out under a mixture of CO and CO2 gases as the crystals were grown with excess oxygen. The effect of reduction and poling on crystalline perfection was studied by high-resolution X-ray diffraction (HRXRD) using a multi-crystal X-ray diffractometer developed in-house. The diffraction curves of the as-grown, electrically poled, moderately reduced and heavily reduced single-crystal specimens show remarkable differences. The studies by HRXRD reveal that poling has some influence on the improvement of crystalline perfection, while chemical reduction has a great influence on crystalline perfection; at moderate reduction the crystal becomes nearly perfect, but when the reduction is very heavy the crystal quality decreases slightly, although it is still better than for unreduced samples. Asymmetry of the diffraction curves with respect to the peak position reveals that the as-grown specimens contain a high concentration of both vacancies and self-interstitials. After poling, the concentration of self-interstitial defects is lowered to some extent. When the specimen is moderately chemically reduced, the scattered intensity on both sides of the peak is greatly reduced, showing that the concentrations of both vacancies and interstitials are reduced to a great extent owing to chemical reduction. This clearly indicates that, as a result of the chemical reduction of oxygen in the crystal, crystalline perfection is enhanced significantly. However, under heavy chemical reduction, the number of vacancy defects is increased to a significant extent. Raman scattering, dielectric and photoluminescence studies also show interesting features, with excellent correlation with the degree of crystalline perfection influenced by the processes of reduction and poling.


2001 ◽  
Vol 346 (3-4) ◽  
pp. 217-223 ◽  
Author(s):  
Hirotaka Fujimori ◽  
Masatomo Yashima ◽  
Satoshi Sasaki ◽  
Masato Kakihana ◽  
Takeharu Mori ◽  
...  

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