High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 52575-52582 ◽  
Author(s):  
H. F. Liu ◽  
Y. J. Jin ◽  
C. G. Li ◽  
S. B. Dolmanan ◽  
S. Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Raman Scattering ◽  
Cross Section ◽  
X Ray Diffraction ◽  
X Ray

Ga-doped Ge thin films grown on GaAs (001) substrates have been studied and compared with unintentionally doped Ge film by using HRXRD and Raman scattering in both surface and cross-section configurations.

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Internal distortion in ceria-doped hafnia solid solutions: High-resolution x-ray diffraction and Raman scattering

2001 ◽  
Vol 64 (13) ◽  
Author(s):  
Hirotaka Fujimori ◽  
Masatomo Yashima ◽  
Satoshi Sasaki ◽  
Masato Kakihana ◽  
Takeharu Mori ◽  
...  
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Solid Solutions ◽  
X Ray Diffraction ◽  
X Ray

High resolution X-ray diffraction investigation of epitaxially grown SrTiO 3 thin films by laser-MBE

2009 ◽  
Vol 33 (11) ◽  
pp. 949-953
Author(s):  
Zhai Zhang-Yin ◽  
Wu Xiao-Shan ◽  
Jia Quan-Jie
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Mbe

scholarly journals High-resolution X-ray diffraction analysis of strain relaxation in epitaxial oxide thin films

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Diffraction Analysis ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Epitaxial Oxide

In situ analysis of the crystallization process of Sb 2 S 3 thin films by Raman scattering and X-ray diffraction

2017 ◽  
Vol 121 ◽  
pp. 1-10 ◽  
Author(s):  
Romain Parize ◽  
Thomas Cossuet ◽  
Odette Chaix-Pluchery ◽  
Hervé Roussel ◽  
Estelle Appert ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Crystallization Process ◽  
In Situ Analysis ◽  
X Ray Diffraction ◽  
X Ray

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

Investigations on nitrogen ion implantation effects in vacuum evaporated CdS thin films using Raman scattering and X-ray diffraction studies

2001 ◽  
Vol 304 (1-4) ◽  
pp. 175-180 ◽  
Author(s):  
K. Senthil ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass ◽  
R. Kesavamoorthy ◽  
G.L.N. Reddy ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Cds Thin Films ◽  
Nitrogen Ion
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