Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior

2001 ◽  
Vol 63 (11) ◽  
Author(s):  
V. Kveder ◽  
M. Kittler ◽  
W. Schröter
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Recombination Activity ◽  
Electron Beam Induced Current

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

Modification of Recombination Activity of Dislocations in Si and SiGe by Contamination and Hydrogenation

1995 ◽  
Vol 378 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert ◽  
V. Higgs
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Dislocation Activity ◽  
Cu Contamination ◽  
Electron Beam Induced Current

AbstractTemperature-dependent (80 … 300 K) measurements of dislocation recombination activity by the electron-beam-induced-current (EBIC) technique are reported. Controlled Cu contamination (ppb to ppm range), chemomechanical polishing and hydrogenation treatments were applied to alter dislocation properties. Increasing Cu level is found not only to increase the electrical activity of misfit dislocations in SiGe/Si structures at 300 K, but also to change its dependence on temperature. At low contamination, shallow centres control dislocation activity while deep centres are characteristic at higher Cu levels. Heavy Cu contamination results in very strong recombination activity which is attributed to precipitates. Chemomechanical polishing has an effect which is analogous to medium Cu contamination. Hydrogenation was found to passivate recombination activity at 300 K, but did not show pronounced effects on activity at low temperature.

Recombination Activity of Twin Boundaries in Silicon Ribbons

2011 ◽  
Vol 178-179 ◽  
pp. 106-109 ◽  
Author(s):  
Eugene B. Yakimov ◽  
Olga V. Feklisova ◽  
Sergei K. Brantov
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Room Temperature ◽  
Carbon Foil ◽  
Induced Current ◽  
Recombination Activity ◽  
Twin Boundaries ◽  
Electron Beam Induced Current

Investigations of silicon layers grown on carbon foil were carried out using the Electron Beam Induced Current (EBIC) methods. The most of grain boundaries in these ribbons are (111) twin boundaries elongated along the direction. The EBIC measurements showed that the recombination contrast of dislocations and of the most part of twin boundaries at room temperature is practically absent and only random grain boundaries and very small part of twin boundaries produce a noticeable contrast. At lower temperatures a number of electrically active twin boundaries increases but the most part of them remains inactive. A contamination with iron increases the recombination activity of random boundaries but not the activity of twin boundaries.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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