Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapor phase epitaxy InP

1986 ◽  
Vol 49 (3) ◽  
pp. 167-169 ◽  
Author(s):  
G. Attolini ◽  
C. Frigeri ◽  
C. Pelosi ◽  
G. Salviati
Keyword(s):  
Electron Beam ◽  
Vapor Phase ◽  
Stacking Faults ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Induced Current ◽  
Recombination Activity ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

2018 ◽  
Vol 11 (4) ◽  
pp. 045502 ◽  
Author(s):  
Hajime Fujikura ◽  
Kentaro Hayashi ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Taichiro Konno ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Current Flow ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Induced Current ◽  
Drift Layer ◽  
Flow Nonuniformity

GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. E. Nikolaev ◽  
YU. V. Melnik ◽  
N. I. Kuznetsov ◽  
A. M. Strelchuk ◽  
A. P. Kovarsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Current Method ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electrical Characteristics ◽  
Flow Geometry ◽  
Electron Beam Induced Current ◽  
P Type ◽  
First Time ◽  
Secondary Ion

AbstractFor the first time, GaN pn-junctions were fabricated by hydride vapor phase epitaxy. GaN pn-structures were grown directly on 6H-SiC substrates without any buffer layer. Undoped GaN layers were n-type with Nd-Na concentration ranged from 1×1017 to 5×1018 cm−3. Magnesium was used as an acceptor to grow p-type GaN layers. Mg atomic concentration determined by secondary ion mass spectroscopy ranged from 5×1019 to 5×1020 cm−3. As-grown GaN layers doped with Mg were p-type, and p-type conductivity was improved by post-growth anneal. Mesa diodes with a vertical current flow geometry were formed by reactive ion etching. The position of the GaN pn-junction was determined by the electron beam induced current method. The electrical characteristics of the pn diodes were studied. Electroluminescence from the pn diodes was measured.

Modification of Recombination Activity of Dislocations in Si and SiGe by Contamination and Hydrogenation

1995 ◽  
Vol 378 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert ◽  
V. Higgs
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Dislocation Activity ◽  
Cu Contamination ◽  
Electron Beam Induced Current

AbstractTemperature-dependent (80 … 300 K) measurements of dislocation recombination activity by the electron-beam-induced-current (EBIC) technique are reported. Controlled Cu contamination (ppb to ppm range), chemomechanical polishing and hydrogenation treatments were applied to alter dislocation properties. Increasing Cu level is found not only to increase the electrical activity of misfit dislocations in SiGe/Si structures at 300 K, but also to change its dependence on temperature. At low contamination, shallow centres control dislocation activity while deep centres are characteristic at higher Cu levels. Heavy Cu contamination results in very strong recombination activity which is attributed to precipitates. Chemomechanical polishing has an effect which is analogous to medium Cu contamination. Hydrogenation was found to passivate recombination activity at 300 K, but did not show pronounced effects on activity at low temperature.

EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 627-630
Author(s):  
Jinggang Lu ◽  
George A. Rozgonyi ◽  
James Rand ◽  
Ralf Jonczyk
Keyword(s):  
Electron Beam ◽  
Electrical Activity ◽  
High Spatial Resolution ◽  
Stacking Faults ◽  
Interstitial Oxygen ◽  
Induced Current ◽  
Contrast Variation ◽  
Lifetime Measurements ◽  
Recombination Lifetime ◽  
Electron Beam Induced Current

The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etching. In addition, a more quantitative intra-grain lifetime was obtained from high spatial resolution PCD measurements. It was found that an SF density of 1 to 2 x 106 cm-2 produces a lifetime limitation in sheet silicon which corresponds to a recombination lifetime of ~2 µs.

Recombination Activity of Twin Boundaries in Silicon Ribbons

2011 ◽  
Vol 178-179 ◽  
pp. 106-109 ◽  
Author(s):  
Eugene B. Yakimov ◽  
Olga V. Feklisova ◽  
Sergei K. Brantov
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Room Temperature ◽  
Carbon Foil ◽  
Induced Current ◽  
Recombination Activity ◽  
Twin Boundaries ◽  
Electron Beam Induced Current

Investigations of silicon layers grown on carbon foil were carried out using the Electron Beam Induced Current (EBIC) methods. The most of grain boundaries in these ribbons are (111) twin boundaries elongated along the direction. The EBIC measurements showed that the recombination contrast of dislocations and of the most part of twin boundaries at room temperature is practically absent and only random grain boundaries and very small part of twin boundaries produce a noticeable contrast. At lower temperatures a number of electrically active twin boundaries increases but the most part of them remains inactive. A contamination with iron increases the recombination activity of random boundaries but not the activity of twin boundaries.

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