Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon

2000 ◽  
Vol 63 (3) ◽  
Author(s):  
Masashi Suezawa
Keyword(s):  
Electron Irradiation ◽  
Crystalline Silicon ◽  
Defect Complexes

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

Hydrogen in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Low Temperatures ◽  
Atomic Hydrogen ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Surface Damage ◽  
Defect Complexes ◽  
Microscopic Models ◽  
Related Defect ◽  
Shallow Acceptors ◽  
Technological Interest

ABSTRACTThe ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest. Recent results on the deactivation of the shallow acceptors in Si are compared with similar experiments in other semiconductors, microscopic models are proposed, and the implications for the states of hydrogen in the Si lattice at a variety of temperatures, and the diffusivity of some of these different states, is discussed. New results on the migration of atomic hydrogen under electronic stimulation are also detailed, along with a compendium of the deep levels in Si passivated by reaction with hydrogen. Surface damage by hydrogen-containing plasmas, and the infrared and electrical properties of H-related defect complexes are also reviewed.

Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment

2015 ◽  
Vol 118 (13) ◽  
pp. 135703 ◽  
Author(s):  
V. Quemener ◽  
B. Raeissi ◽  
F. Herklotz ◽  
L. I. Murin ◽  
E. V. Monakhov ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Electron Irradiation ◽  
Crystalline Silicon ◽  
Kinetics Study ◽  
Evolution Of Oxygen

Lithium–gold‐related defect complexes inn‐type crystalline silicon

1995 ◽  
Vol 77 (7) ◽  
pp. 3146-3154 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
Sigurgeir Kristjansson ◽  
Haflidi P. Gislason
Keyword(s):  
Crystalline Silicon ◽  
Defect Complexes ◽  
Related Defect

Photocurrent Enhancement Induced By Interface Modifications Due To Low Dose Electron Irradiation Of Amorphous∕Crystalline Silicon Heterojunctions

2010 ◽  
Author(s):  
Heinz-Christoph Neitzert ◽  
Manuela Ferrara ◽  
Wolfgang Fahrner ◽  
Maximilian Scherff ◽  
Arjen Klaver ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Low Dose ◽  
Crystalline Silicon ◽  
Silicon Heterojunctions

Influence of Electron Irradiation on the Yellow Luminescence in Undoped n-GaN

2012 ◽  
Vol 571 ◽  
pp. 125-128
Author(s):  
Li Min Liang ◽  
Xin Jian Xie ◽  
Qiu Yan Hao ◽  
Yuan Tian ◽  
Wei Zhong Sun ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Annealing ◽  
Electron Irradiation ◽  
Deep Level ◽  
Yellow Luminescence ◽  
Defect Complexes ◽  
Oxygen Donor

The yellow luminescence (YL) band in unintentional doped n-GaN irradiated by 10 MeV electrons has been investigated by means of photoluminescence (PL) spectroscopy. The YL intensity increased after electron irradiation and thermal annealing, indicating that the deep level defects are created by electron irradiation and thermal annealing. These deep level point defect complexes arising from the irradiation introduced Ga vacancies and oxygen donor impurities are responsible for the YL.

Evaluation of single-electron movies of glutamine synthetase molecules

1983 ◽  
Vol 41 ◽  
pp. 280-281
Author(s):  
W. Kunath ◽  
E. Zeitler ◽  
M. Kessel
Keyword(s):  
Electron Microscope ◽  
Glutamine Synthetase ◽  
Electron Irradiation ◽  
Structural Damage ◽  
Structural Changes ◽  
Single Electron ◽  
Continuous Series ◽  
Digital Recording ◽  
Recording Device ◽  
Low Exposure

The features of digital recording of a continuous series (movie) of singleelectron TV frames are reported. The technique is used to investigate structural changes in negatively stained glutamine synthetase molecules (GS) during electron irradiation and, as an ultimate goal, to look for the molecules' “undamaged” structure, say, after a 1 e/Å2 dose.The TV frame of fig. la shows an image of 5 glutamine synthetase molecules exposed to 1/150 e/Å2. Every single electron is recorded as a unit signal in a 256 ×256 field. The extremely low exposure of a single TV frame as dictated by the single-electron recording device including the electron microscope requires accumulation of 150 TV frames into one frame (fig. lb) thus achieving a reasonable compromise between the conflicting aspects of exposure time per frame of 3 sec. vs. object drift of less than 1 Å, and exposure per frame of 1 e/Å2 vs. rate of structural damage.

Radiation-Induced Precipitation at Thin Foil Surfaces in Ni-Be Alloys

1982 ◽  
Vol 40 ◽  
pp. 598-599
Author(s):  
T. Mukai ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Electron Irradiation ◽  
High Vacuum ◽  
Thin Foil ◽  
Homogeneous Precipitation ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Radiation Induced

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.

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