Photocurrent Enhancement Induced By Interface Modifications Due To Low Dose Electron Irradiation Of Amorphous∕Crystalline Silicon Heterojunctions

2010 ◽  
Author(s):  
Heinz-Christoph Neitzert ◽  
Manuela Ferrara ◽  
Wolfgang Fahrner ◽  
Maximilian Scherff ◽  
Arjen Klaver ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Low Dose ◽  
Crystalline Silicon ◽  
Silicon Heterojunctions

Electrical characterization ofn‐amorphous/p‐crystalline silicon heterojunctions

1996 ◽  
Vol 79 (11) ◽  
pp. 8493-8497 ◽  
Author(s):  
L. F. Marsal ◽  
J. Pallarès ◽  
X. Correig ◽  
J. Calderer ◽  
R. Alcubilla
Keyword(s):  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Silicon Heterojunctions

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

Influence of hydrogen concentration on void-related microstructure in low hydrogen amorphous and crystalline silicon materials

2014 ◽  
Vol 92 (7/8) ◽  
pp. 700-704 ◽  
Author(s):  
W. Beyer ◽  
U. Breuer ◽  
R. Carius ◽  
W. Hilgers ◽  
D. Lennartz ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Amorphous Materials ◽  
Low Dose ◽  
Concentration Level ◽  
Crystalline Silicon ◽  
High Deposition Temperature ◽  
Diffusion Paths ◽  
Silicon Materials ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

The influence of implanted hydrogen (up to a concentration level of 3 at. %) on the microstructure of silicon (Si) materials is investigated by Fourier transform infrared spectroscopy as well as by effusion of hydrogen and of (low dose) implanted helium. Three materials of low original hydrogen concentration, crystalline Si, electron beam evaporated amorphous Si, and plasma-deposited hydrogenated amorphous Si (using high deposition temperature) were investigated. Significant differences between crystalline and amorphous materials were observed. In crystalline Si, implanted hydrogen is found to generate multivacancies that trap diffusing helium while this is not the case in amorphous Si. Accordingly, cavities where hydrogen is located in amorphous Si must be smaller than divacancies. Those cavities in amorphous Si, present from the growth process, that trap helium tend to disappear when the implanted hydrogen concentration increases. Annealing of the materials up to temperatures of 575 °C was also studied. No significant change in the density of voids (trapping helium) occur but in case of crystalline Si the bonding sites of hydrogen as well as the diffusion paths of helium change.

scholarly journals Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy

2013 ◽  
Vol 102 (12) ◽  
pp. 122106 ◽  
Author(s):  
Mathias Mews ◽  
Tim F. Schulze ◽  
Nicola Mingirulli ◽  
Lars Korte
Keyword(s):  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Plasma Treatments ◽  
Silicon Heterojunctions
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