Theoretical study of luminescence degradation by oxidation in Si(001) and Si(111) ultrathin films: Gap states induced by oxidation

1999 ◽  
Vol 60 (12) ◽  
pp. 8902-8908 ◽  
Author(s):  
Masahiko Nishida
Keyword(s):  
Ultrathin Films ◽  
Theoretical Study ◽  
Gap States

scholarly journals On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case

2018 ◽  
Vol 461 ◽  
pp. 143-148 ◽  
Author(s):  
V. Hašková ◽  
M. Kopčík ◽  
P. Szabó ◽  
T. Samuely ◽  
J. Kačmarčík ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Gap States

The density of states in dc glow discharge deposited a-Si: H from Schottky barrier diode admittance measurements

1983 ◽  
Vol 61 (5) ◽  
pp. 736-743 ◽  
Author(s):  
P. K. Jain ◽  
R. V. Kruzélecky ◽  
S. Zukotynski
Keyword(s):  
Glow Discharge ◽  
Schottky Barrier ◽  
Density Of States ◽  
Theoretical Study ◽  
Thermal Response ◽  
Interaction Kinetics ◽  
Thermal Response Time ◽  
Gap States ◽  
Kinetics Of ◽  
Frequency Temperature

An experimental and theoretical study of the admittance of a-Si:H Schottky barrier diodes versus frequency, temperature, and voltage is presented. A full numerical analysis of the admittance of the Schottky diode with an arbitrary density of states (DOS) distribution is given. It is based on a general model using an equivalent circuit of the devices. The analysis takes into account the thermal response time of gap states as well as the transport of carriers. The DOS distribution near the Fermi level is determined for diodes prepared using direct current glow discharge deposited a-Si:H. It is shown from the admittance study that the thermionic theory is appropriate to describe the transport of electrons across the junction. It is demonstrated that the occupancy of bulk states is controlled mainly by the interaction kinetics of these states with the electrons in the conduction band and not by transport of these electrons.

Theoretical Study of the Kerr Effect in Ultrathin Films Fen/Ag(001)

2013 ◽  
Vol 11 (9) ◽  
pp. 1658-1666 ◽  
Author(s):  
M. Boukelkoul ◽  
N. Ouarab ◽  
M. Kharoubi ◽  
A. Haroun
Keyword(s):  
Ultrathin Films ◽  
Kerr Effect ◽  
Theoretical Study

scholarly journals Structural order in ultrathin films of the monolayer protected clusters based upon 4 nm gold nanocrystals: an experimental and theoretical study

2014 ◽  
Vol 16 (34) ◽  
pp. 18098-18104 ◽  
Author(s):  
Nabraj Bhattarai ◽  
Subarna Khanal ◽  
Daniel Bahena ◽  
Jimena A. Olmos-Asar ◽  
Arturo Ponce ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Theoretical Study ◽  
Size Range ◽  
Gold Nanocrystals ◽  
Metallic Core ◽  
Structural Order ◽  
Monolayer Protected Clusters ◽  
Intermediate Size ◽  
Conventional Methods

The structural order in ultrathin films of monolayer protected clusters (MPCs) is important in a number of application areas but can be difficult to demonstrate by conventional methods, particularly when the metallic core dimension, d, is in the intermediate size-range, 1.5 < d < 5.0 nm.

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