The density of states in dc glow discharge deposited a-Si: H from Schottky barrier diode admittance measurements
An experimental and theoretical study of the admittance of a-Si:H Schottky barrier diodes versus frequency, temperature, and voltage is presented. A full numerical analysis of the admittance of the Schottky diode with an arbitrary density of states (DOS) distribution is given. It is based on a general model using an equivalent circuit of the devices. The analysis takes into account the thermal response time of gap states as well as the transport of carriers. The DOS distribution near the Fermi level is determined for diodes prepared using direct current glow discharge deposited a-Si:H. It is shown from the admittance study that the thermionic theory is appropriate to describe the transport of electrons across the junction. It is demonstrated that the occupancy of bulk states is controlled mainly by the interaction kinetics of these states with the electrons in the conduction band and not by transport of these electrons.