Optical transition energies for lead-salt semiconductor quantum wells

1999 ◽  
Vol 60 (12) ◽  
pp. 8859-8865 ◽  
Author(s):  
Erasmo A. de Andrada e Silva
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Lead Salt ◽  
Transition Energies ◽  
Semiconductor Quantum Wells

Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

2003 ◽  
Vol 798 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoshinobu Kawaguchi ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Probability ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Semiconductor Quantum Wells ◽  
Emission Lifetime ◽  
Quantum Disks ◽  
The Difference ◽  
Optical Transition Probability

ABSTRACTThe dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

Optical transition energies of GaInP quantum wells with GaInP/AlInP superlattice barriers

1994 ◽  
Vol 76 (2) ◽  
pp. 1355-1357 ◽  
Author(s):  
Y. Seko ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
M. Fuse
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Energies

Intra-magnetoexciton transitions in semiconductor quantum wells

2001 ◽  
Vol 692 ◽  
Author(s):  
Z. Barticevic ◽  
M. Pacheco ◽  
C. A. Duque ◽  
L. E. Oliveira
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Far Infrared ◽  
Theoretical Work ◽  
Growth Direction ◽  
Oscillator Strengths ◽  
Transition Energies ◽  
Semiconductor Quantum Wells ◽  
Optically Detected ◽  
Optically Detected Resonance

AbstractHighly sensitive optically detected resonance experiments have shown that magnetoexcitons in GaAs-(Ga,Al)As semiconductor quantum wells have discrete internal energy levels, with transition energies found in the far-infrared (terahertz) region. Here we are concerned with a theoretical study of the terahertz transitions of light-hole and heavy-hole confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells, under a magnetic field applied in the growth direction of the semiconductor heterostructure. The various magnetoexciton states are obtained in the effective-mass approximation by expanding the corresponding exciton-envelope wave functions in terms of appropriate Gaussian functions. The electron and hole cyclotron resonances and intra-magnetoexciton transitions are theoretically studied by exciting the allowed electron, hole and internal magnetoexcitonic transitions with far-infrared radiation. Theoretical results are obtained for both the intra-magnetoexciton transition energies and oscillator strengths associated with excitations from 1s - like to 2s, 2p±, and 3p±- like magnetoexciton states, and from 2p- to 2s – like exciton states. Present results are in overall agreement with available optically detected resonance measurements and clarifies a number of queries in previous theoretical work.

Microcavities

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Quantum Wells ◽  
Strong Light ◽  
Fundamental Physics ◽  
Postgraduate Students ◽  
Optical Cavities ◽  
Semiconductor Quantum Wells ◽  
Exciton Polaritons ◽  
Different Types ◽  
Potential Applications ◽  
Experimental Findings

Both rich fundamental physics of microcavities and their intriguing potential applications are addressed in this book, oriented to undergraduate and postgraduate students as well as to physicists and engineers. We describe the essential steps of development of the physics of microcavities in their chronological order. We show how different types of structures combining optical and electronic confinement have come into play and were used to realize first weak and later strong light–matter coupling regimes. We discuss photonic crystals, microspheres, pillars and other types of artificial optical cavities with embedded semiconductor quantum wells, wires and dots. We present the most striking experimental findings of the recent two decades in the optics of semiconductor quantum structures. We address the fundamental physics and applications of superposition light-matter quasiparticles: exciton-polaritons and describe the most essential phenomena of modern Polaritonics: Physics of the Liquid Light. The book is intended as a working manual for advanced or graduate students and new researchers in the field.

Lateral-superlattice effects in very narrow strained semiconductor quantum wells grown on vicinal surfaces

1993 ◽  
Vol 47 (20) ◽  
pp. 13880-13883 ◽  
Author(s):  
F. Meseguer ◽  
F. Agulló-Rueda ◽  
C. López ◽  
J. Sánchez-Dehesa ◽  
J. Massies ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vicinal Surfaces ◽  
Semiconductor Quantum Wells
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