Optical transition energies of GaInP quantum wells with GaInP/AlInP superlattice barriers

1994 ◽  
Vol 76 (2) ◽  
pp. 1355-1357 ◽  
Author(s):  
Y. Seko ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
M. Fuse
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Energies

Interface-phonon-mediated magnetopolaronic effect on impurity transition energies in quantum wells

1991 ◽  
Vol 43 (11) ◽  
pp. 9328-9331 ◽  
Author(s):  
D. L. Lin ◽  
R. Chen ◽  
Thomas F. George
Keyword(s):  
Quantum Wells ◽  
Transition Energies

scholarly journals Universal Kataura Plot for Optical Transition Energies of Single-Walled Carbon Nanotubes (abstract)

2009 ◽  
Author(s):  
Jong Hyun Choi ◽  
Michael S. Strano ◽  
Beverly Karplus Hartline ◽  
Renee K. Horton ◽  
Catherine M. Kaicher
Keyword(s):  
Carbon Nanotubes ◽  
Optical Transition ◽  
Single Walled Carbon Nanotubes ◽  
Transition Energies ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

2003 ◽  
Vol 798 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoshinobu Kawaguchi ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Probability ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Semiconductor Quantum Wells ◽  
Emission Lifetime ◽  
Quantum Disks ◽  
The Difference ◽  
Optical Transition Probability

ABSTRACTThe dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

Interband Optical Transition Energies in Type-II PbSe/PbS Core/Shell Quantum Dots

2017 ◽  
Vol 6 (1) ◽  
pp. 80-86
Author(s):  
S. N. Saravanamoorthy ◽  
A. John Peter
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Shell Thickness ◽  
Optical Transition ◽  
Hole Pair ◽  
Core Shell ◽  
Type Ii ◽  
Electron Hole ◽  
Transition Energies ◽  
Electron Hole Pair

Electronic and optical properties of Type-II lead based core/shell semiconducting quantum dots are reported. Binding energies of electron–hole pair, optical transition energies and the absorption coefficients are investigated taking into account the geometrical confinement in PbSe/PbS core/shell quantum dot nanostructure. The energies are obtained with the increase of shell thickness for various inner core radii. The probability densities of electron and hole wave functions of radial coordinate of the core PbSe and PbS shell quantum dots are presented. The optical transition energy with the spatial confinement is brought out. The electronic properties are obtained using variational approach whereas the compact density matrix method is employed for the nonlinear optical properties. The results show that (i) a decrease in binding energy is obtained when the shell thickness increases due to more separation of electron–hole pair and (ii) the energy band gap decreases with the increase in the shell thickness resulting in the reduction of the higher energy interband transitions.

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