Intra-magnetoexciton transitions in semiconductor quantum wells

Highly sensitive optically detected resonance experiments have shown that magnetoexcitons in GaAs-(Ga,Al)As semiconductor quantum wells have discrete internal energy levels, with transition energies found in the far-infrared (terahertz) region. Here we are concerned with a theoretical study of the terahertz transitions of light-hole and heavy-hole confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells, under a magnetic field applied in the growth direction of the semiconductor heterostructure. The various magnetoexciton states are obtained in the effective-mass approximation by expanding the corresponding exciton-envelope wave functions in terms of appropriate Gaussian functions. The electron and hole cyclotron resonances and intra-magnetoexciton transitions are theoretically studied by exciting the allowed electron, hole and internal magnetoexcitonic transitions with far-infrared radiation. Theoretical results are obtained for both the intra-magnetoexciton transition energies and oscillator strengths associated with excitations from 1s - like to 2s, 2p±, and 3p±- like magnetoexciton states, and from 2p- to 2s – like exciton states. Present results are in overall agreement with available optically detected resonance measurements and clarifies a number of queries in previous theoretical work.