Photocurrent spectroscopy of 5‐nm‐wide InGaAs/InAlAs quantum wells and quadratic dependence of optical transition energies on quantum numbers

1995 ◽  
Vol 78 (8) ◽  
pp. 5168-5170 ◽  
Author(s):  
N. Kotera ◽  
K. Tanaka ◽  
H. Nakamura
1994 ◽  
Vol 76 (2) ◽  
pp. 1355-1357 ◽  
Author(s):  
Y. Seko ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
M. Fuse

1988 ◽  
Vol 38 (11) ◽  
pp. 7796-7799 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Sanders ◽  
K. R. Evans ◽  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
...  

1992 ◽  
Vol 01 (03) ◽  
pp. 473-491
Author(s):  
R.A. PUECHNER ◽  
D.S. GERBER ◽  
R. DROOPAD ◽  
G.N. MARACAS

The electroabsorptive behavior of asymmetric triangular quantum wells (ATQW) in the active region of a p-i-n self-electro-optic effect device (SEED) structure is experimentally investigated. Excition transition energies are measured by photoluminescence and photocurrent spectroscopy at room temperature and at low temperatures. Room-temperature excitonic linewidths of 9.2 meV for a 265-Å ATQW have been obtained. The electric field modulation of excitonic absorption in ATQWs with compositional grading, both increasing and decreasing in the growth direction is presented. When compared with a similar rectangular quantum-well device, it is observed that ATQWs have intrinsically higher responsivity, comparable room temperature linewidths, and higher device on/off ratios.


1991 ◽  
Vol 43 (11) ◽  
pp. 9328-9331 ◽  
Author(s):  
D. L. Lin ◽  
R. Chen ◽  
Thomas F. George

2019 ◽  
Vol 10 (23) ◽  
pp. 7362-7367 ◽  
Author(s):  
Ninghao Zhou ◽  
Jun Hu ◽  
Zhenyu Ouyang ◽  
Olivia F. Williams ◽  
Liang Yan ◽  
...  

2009 ◽  
Author(s):  
Jong Hyun Choi ◽  
Michael S. Strano ◽  
Beverly Karplus Hartline ◽  
Renee K. Horton ◽  
Catherine M. Kaicher

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