Temperature dependence of tunneling magnetoresistance in manganite tunnel junctions

1999 ◽  
Vol 60 (6) ◽  
pp. 4235-4239 ◽  
Author(s):  
Pin Lyu ◽  
D. Y. Xing ◽  
Jinming Dong
2002 ◽  
Vol 240 (1-3) ◽  
pp. 149-151 ◽  
Author(s):  
J.H. Lee ◽  
In-Woo Chang ◽  
S.J. Byun ◽  
K. Rhie ◽  
Kyung-Ho Shin ◽  
...  

2002 ◽  
Vol 7 (2) ◽  
pp. 59-62
Author(s):  
K.I. Lee ◽  
J.H. Lee ◽  
W.Y. Lee ◽  
K. Rhie ◽  
B.C. Lee ◽  
...  

2021 ◽  
Vol 118 (1) ◽  
pp. 012409
Author(s):  
Junta Igarashi ◽  
Butsurin Jinnai ◽  
Valentin Desbuis ◽  
Stéphane Mangin ◽  
Shunsuke Fukami ◽  
...  

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.


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