Nonuniversal conductance quantization in high-quality quantum wires

1998 ◽  
Vol 57 (12) ◽  
pp. R6834-R6837 ◽  
Author(s):  
Anton Yu. Alekseev ◽  
Vadim V. Cheianov
Keyword(s):  
Quantum Wires ◽  
High Quality ◽  
Conductance Quantization

scholarly journals Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
V. Clericò ◽  
J. A. Delgado-Notario ◽  
M. Saiz-Bretín ◽  
A. V. Malyshev ◽  
Y. M. Meziani ◽  
...  
Keyword(s):  
Zero Magnetic Field ◽  
Quality Systems ◽  
High Quality ◽  
Conductance Quantization ◽  
Force Microscopy ◽  
Edge Geometry ◽  
Atomic Force ◽  
Etching Method ◽  
Edge Roughness

Abstract We report on a novel implementation of the cryo-etching method, which enabled us to fabricate low-roughness hBN-encapsulated graphene nanoconstrictions with unprecedented control of the structure edges; the typical edge roughness is on the order of a few nanometers. We characterized the system by atomic force microscopy and used the measured parameters of the edge geometry in numerical simulations of the system conductance, which agree quantitatively with our low temperature transport measurements. The quality of our devices is confirmed by the observation of well defined quantized 2e2/h conductance steps at zero magnetic field. To the best of our knowledge, such an observation reports the clearest conductance quantization in physically etched graphene nanoconstrictions. The fabrication of such high quality systems and the scalability of the cryo-etching method opens a novel promising possibility of producing more complex truly-ballistic devices based on graphene.

On the choice of precursors for the MOVPE-growth of high-quality Al0.30Ga0.70As/GaAs v-groove quantum wires with large subband spacing

2000 ◽  
Vol 221 (1-4) ◽  
pp. 91-97 ◽  
Author(s):  
A. Kaluza ◽  
A. Schwarz ◽  
D. Gauer ◽  
H. Hardtdegen ◽  
N. Nastase ◽  
...  
Keyword(s):  
Quantum Wires ◽  
High Quality ◽  
Movpe Growth

Preparation and Patterning of GaSb Surfaces with Br-IBAE for Antimonide Based Molecular Beam Epitaxy

2003 ◽  
Vol 792 ◽  
Author(s):  
S.R. Vangala ◽  
B. Krejca ◽  
K. Krishnaswami ◽  
H. Dauplaise ◽  
X. Qian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Oxide Layer ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Subsurface Damage ◽  
High Quality

ABSTRACTBromine Ion Beam Assisted Etching (Br-IBAE) is shown to be useful in removing GaSb wafer chemical mechanical polish (CMP) surface and subsurface damage; creating microstructure patterns in GaSb surfaces through stencil, photoresist, and oxides masks; and stabilizing the as-etched GaSb surface with a thin, easily thermally desorbed oxide layer. Thus, the Br-IBAE technique is well suited as a GaSb surface final-polish technique in overgrowth applications that require “epi-ready” GaSb (100) surfaces for molecular beam epitaxy (MBE) as well as applications such as quantum wires and dots that require high-quality GaSb/AlInGaSb MBE overgrowth over patterned GaSb (100) surfaces.

Spin splitting of one-dimensional subbands in high quality quantum wires at zero magnetic field

2000 ◽  
Vol 62 (23) ◽  
pp. 15842-15850 ◽  
Author(s):  
K. S. Pyshkin ◽  
C. J. B. Ford ◽  
R. H. Harrell ◽  
M. Pepper ◽  
E. H. Linfield ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wires ◽  
Spin Splitting ◽  
Zero Magnetic Field ◽  
High Quality ◽  
One Dimensional

Microphotoluminescence studies of high quality single quantum wires

1998 ◽  
Vol 42 (7-8) ◽  
pp. 1217-1221 ◽  
Author(s):  
V. Voliotis ◽  
J. Bellessa ◽  
R. Grousson ◽  
X.L. Wang ◽  
M. Ogura ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Single Quantum ◽  
High Quality

High quality GaAs quantum wires grown by flow rate modulation epitaxy

1998 ◽  
Vol 66 (2) ◽  
pp. 137-141
Author(s):  
A. Hamoudi ◽  
M. Ogura ◽  
X.L. Wang ◽  
T. Okada ◽  
H. Matsuhata
Keyword(s):  
Flow Rate ◽  
Quantum Wires ◽  
High Quality ◽  
Rate Modulation
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