High quality GaAs quantum wires grown by flow rate modulation epitaxy

1998 ◽  
Vol 66 (2) ◽  
pp. 137-141
Author(s):  
A. Hamoudi ◽  
M. Ogura ◽  
X.L. Wang ◽  
T. Okada ◽  
H. Matsuhata
Keyword(s):  
Flow Rate ◽  
Quantum Wires ◽  
High Quality ◽  
Rate Modulation

Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate

1995 ◽  
Vol 66 (12) ◽  
pp. 1506-1508 ◽  
Author(s):  
Xue‐Lun Wang ◽  
Mutsuo Ogura ◽  
Hirofumi Matsuhata
Keyword(s):  
Flow Rate ◽  
Quantum Wires ◽  
Rate Modulation

Optical properties of a lateral array of GaAs quantum wires grown by flow rate modulation epitaxy

1997 ◽  
Vol 22 (3) ◽  
pp. 353-358 ◽  
Author(s):  
A. Hamoudi ◽  
M. Ogura ◽  
X.L. Wang ◽  
T. Okada
Keyword(s):  
Optical Properties ◽  
Flow Rate ◽  
Quantum Wires ◽  
Rate Modulation

scholarly journals High-quality a-plane GaN grown with flow-rate modulation epitaxy on r-plane sapphire substrate

2008 ◽  
Vol 310 (11) ◽  
pp. 2712-2716 ◽  
Author(s):  
Jeng-Jie Huang ◽  
Tsung-Yi Tang ◽  
Chi-Feng Huang ◽  
C.C. Yang
Keyword(s):  
Flow Rate ◽  
Sapphire Substrate ◽  
High Quality ◽  
Rate Modulation

Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

1987 ◽  
Vol 50 (20) ◽  
pp. 1435-1437 ◽  
Author(s):  
Naoki Kobayashi ◽  
Toshiki Makimoto ◽  
Yoshiji Horikoshi
Keyword(s):  
Flow Rate ◽  
Atomic Layer ◽  
Doping Profile ◽  
Rate Modulation

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

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