Enabling in situ atomic scale surface imaging for vertical molecular beam epitaxy machines

2006 ◽  
Vol 24 (6) ◽  
pp. 2776 ◽  
Author(s):  
Dong Jun Kim ◽  
Deokjoon Cha ◽  
Gregory J. Salamo ◽  
Haeyeon Yang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Surface Imaging ◽  
Scale Surface

Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds

1989 ◽  
Vol 169 ◽  
Author(s):  
D.G. Schlomtt ◽  
J.N. Eckstein ◽  
I. Bozo Vic ◽  
A.F. Marshall ◽  
J.T. Sizemore ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Cuprate Superconductors ◽  
Molecular Beams ◽  
Atomic Scale ◽  
Superconducting Film ◽  
Mbe Growth

AbstractThe in situ epitaxial growth of Bi‐Sr‐Ca‐Cu‐O films by molecular beam epitaxy (MBE) is reported. The suitability of ozone to the MBE growth of cuprate superconductors is discussed. Molecular beams of the constituents were periodically shuttered to grow various Bi2Sr2Can‐1CunOx phases, including 2201, 2212,2223,2245, and layered mixtures of these phases. Using these techniques a superconducting film with TConset near 100 K and Tc (ρ=0) of 81 K was achieved under entirely MBE conditions (Pchamber≤xl0‐4 Torr during growth and cooling). The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE growth to selectively grow Bi2Sr2Can‐1CunOx phases.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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