scholarly journals Negative-electron-affinity effect on the surface of chemical-vapor-deposited diamond polycrystalline films

1996 ◽  
Vol 53 (12) ◽  
pp. R7650-R7653 ◽  
Author(s):  
I. L. Krainsky ◽  
V. M. Asnin ◽  
G. T. Mearini ◽  
J. A. Dayton
Keyword(s):  
Electron Affinity ◽  
Chemical Vapor ◽  
Negative Electron Affinity ◽  
Polycrystalline Films ◽  
Chemical Vapor Deposited

Surface conditioning of chemical vapor deposited hexagonal boron nitride film for negative electron affinity

1999 ◽  
Vol 74 (1) ◽  
pp. 28-30 ◽  
Author(s):  
Kian Ping Loh ◽  
Isao Sakaguchi ◽  
Mikka Nishitani Gamo ◽  
Shigeru Tagawa ◽  
Takashi Sugino ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Affinity ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Negative Electron Affinity ◽  
Surface Conditioning ◽  
Chemical Vapor Deposited

Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation

1994 ◽  
Vol 33 (Part 1, No. 11) ◽  
pp. 6312-6315 ◽  
Author(s):  
Nobuhiro Eimori ◽  
Yusuke Mori ◽  
Akimitsu Hatta ◽  
Toshimichi Ito ◽  
Akio Hiraki
Keyword(s):  
Synchrotron Radiation ◽  
Electron Affinity ◽  
Chemical Vapor ◽  
Single Crystalline ◽  
Chemical Vapor Deposited

Effect of SP3/(SP2+SP3) Carbon Fraction on the Photoelectric Threshold and Electron Affinity of Diamond Films

1998 ◽  
Vol 509 ◽  
Author(s):  
I.A. Akwani ◽  
E.D. Sosa ◽  
S.C. Lim ◽  
R.E. Stallcup ◽  
J.N. Castillega ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Photoelectron Spectroscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Negative Electron Affinity ◽  
Carbon Fraction ◽  
X Ray ◽  
Carbon Networks ◽  
Forms Of Carbon ◽  
Photoelectric Threshold

AbstractWe report a significant decrease in the photoelectric threshold of chemical vapor deposition grown diamond films as the fraction of sp3 carbon to sp2 plus sp3 carbon in the films decreases. Raman spectroscopy and x-ray photoelectron spectroscopy are used to characterize the different forms of carbon in the films and the sp3/(sp2 + sp3) carbon fraction at the surface. We observe a decrease in the photoelectric threshold from 4.5 eV to 3.9 eV as the sp3/(sp2 + sp3) carbon fraction at the surface decreases from 71% to 55%. Ultraviolet photoelectron spectroscopy of the films shows that they have a negative electron affinity surface. Therefore, the work function of the films decreases from 4.5 eV to 3.9 eV. We propose that the decrease in photoelectric threshold is due to a decrease in the band gap of sp2-sp3 carbon networks at the grain boundaries. The observed decrease in photoelectric threshold can be used to tailor the electronic properties of diamond films for specific applications.

Fluorescent Nanodiamonds: Effect of Surface Termination

2009 ◽  
Vol 1203 ◽  
Author(s):  
Irena Kratochvílová ◽  
Andrew Taylor ◽  
Alexander Kovalenko ◽  
Frantisek Fendrych ◽  
Vladimira Řezáčová ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electron Affinity ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Hydrogen Chemisorption ◽  
Negative Electron Affinity ◽  
Diamond Surfaces ◽  
Surface Hydrogen ◽  
Physico Chemical

AbstractIt has been reported that physico-chemical properties of diamond surfaces are closely related to the surface chemisorbed species on the surface. Hydrogen chemisorption on a chemical vapor deposition grown diamond surface is well-known to be important for stabilizing diamond surface structures with sp3 hybridization. It has been suggested that an H-chemisorbed structure is necessary to provide a negative electron affinity condition on the diamond surfaces. Negative electron affinity condition could change to a positive electron affinity by oxidation of the H-chemisorbed diamond surfaces. Oxidized diamond surfaces usually show characteristics completely different from those of the H-chemisorbed diamond surfaces. The unique electron affinity condition, or the surface potential, is strongly related to the chemisorbed species on diamond surfaces. The relationship between the surface chemisorption structure and the surface electrical properties, such as the surface potential of the diamond, has been modelled using DFT based calculations.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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