Cyclic Deformation Behavior and Related Micro-Mechanisms of Ni-Carbonyl Chemical Vapor Deposited (CVD) Material with Bimodal Grain Structures: Ultrafine (UF) Grains and Large Grains with UF/Nano Twins

2019 ◽  
Author(s):  
Shaohua Fu ◽  
Tzu-Yin Jean Hsu ◽  
Zhirui Wang
Keyword(s):  
Cyclic Deformation ◽  
Deformation Behavior ◽  
Chemical Vapor ◽  
Grain Structures ◽  
Chemical Vapor Deposited

On the Adhesion of LPCVD WSi2 to Doped and Undoped Polysilicon

1988 ◽  
Vol 119 ◽  
Author(s):  
K. Shenai ◽  
P. A. Piacente ◽  
N. Lewis ◽  
M. D. McConnell ◽  
G. A. Smith ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Chemical Vapor ◽  
Atomic Ratio ◽  
Silicide Film ◽  
Grain Structures ◽  
Integrated Devices ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Pressure Chemical ◽  
And Diffusion

AbstractWe report on the adhesion characteristics of Low Pressure Chemical Vapor Deposited (LPCVD) WSi2 to doped and undoped polysilicon when used for fabricating silicon discreie and integrated devices. About 3000Å of silicon rich (Si:W atomic ratio of 2.6) LPCVD WSi2 was deposited on 6 kÅ of polysilicon and annealed in nitriding and oxidizing ambients at various temperatures from 1000°C to 1100°C to lower the sheet resistance. Detailed material analyses of as-deposited and annealed polycides were performed using Auger, SIMS, RBS, TEM, and SEM and electrical conductivities of the films were measured using the four point probe. In some samples, the oxide grown on the silicide film was wet etched prior to implanting and diffusing As corresponding to the source/drain diffusions in power FET's. It was observed that polysilicon doping, WSi2 deposition and annealing, oxide or nitride etching, implantation and diffusion of As - all had significant impact on the grain structures of silicide and polysilicon, adhesion of the silicide film to polysilicon, and the electrical conductivity of the silicide. In samples where the oxide grown on the silicide was wet etched, enhanced grain boundary related oxidation of the silicide and polysilicon and seepage of the wet etchant through sequential etching of grain boundary oxide resulted in poor adhesion of WSi2 grains to polysilicon and eventual silicide peeloff. This problem was severe in samples which were not implanted with As but subjected to 900°C, 60 min. source drive.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

scholarly journals Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited
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