Surface conditioning of chemical vapor deposited hexagonal boron nitride film for negative electron affinity

1999 ◽  
Vol 74 (1) ◽  
pp. 28-30 ◽  
Author(s):  
Kian Ping Loh ◽  
Isao Sakaguchi ◽  
Mikka Nishitani Gamo ◽  
Shigeru Tagawa ◽  
Takashi Sugino ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Affinity ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Negative Electron Affinity ◽  
Surface Conditioning ◽  
Chemical Vapor Deposited

scholarly journals Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Science ◽  
2018 ◽  
Vol 362 (6416) ◽  
pp. 817-821 ◽  
Author(s):  
Joo Song Lee ◽  
Soo Ho Choi ◽  
Seok Joon Yun ◽  
Yong In Kim ◽  
Stephen Boandoh ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Monolayer Films ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Liquid Gold ◽  
Grain Formation

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.

scholarly journals Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

2017 ◽  
Vol 9 (45) ◽  
pp. 39758-39770 ◽  
Author(s):  
Lanlan Jiang ◽  
Yuanyuan Shi ◽  
Fei Hui ◽  
Kechao Tang ◽  
Qian Wu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Dielectric Breakdown ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

2017 ◽  
Vol 9 (46) ◽  
pp. 39895-39900 ◽  
Author(s):  
Fei Hui ◽  
Wenjing Fang ◽  
Wei Sun Leong ◽  
Tewa Kpulun ◽  
Haozhe Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposited

scholarly journals Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Subash Sharma ◽  
Golap Kalita ◽  
Riteshkumar Vishwakarma ◽  
Zurita Zulkifli ◽  
Masaki Tanemura
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
M. Venkata Kamalakar ◽  
André Dankert ◽  
Johan Bergsten ◽  
Tommy Ive ◽  
Saroj P. Dash
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Spin Injection ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited
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