Temperature dependence of the free-exciton-emission linewidth in high-purity InP

1995 ◽  
Vol 52 (4) ◽  
pp. R2273-R2276 ◽  
Author(s):  
R. Benzaquen ◽  
R. Leonelli ◽  
S. Charbonneau ◽  
P. J. Poole ◽  
A. P. Roth
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Free Exciton ◽  
Exciton Emission

scholarly journals Temperature dependence of the LO phonon sidebands in free exciton emission of GaN

2006 ◽  
Vol 99 (7) ◽  
pp. 073508 ◽  
Author(s):  
S. J. Xu ◽  
G. Q. Li ◽  
S.-J. Xiong ◽  
C. M. Che
Keyword(s):  
Temperature Dependence ◽  
Free Exciton ◽  
Exciton Emission

A Study of Free- and Bound-Exciton Recombination in Device Quality Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
S. J. Sharp ◽  
A. T. Collins
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Temperature Dependence ◽  
High Purity ◽  
Vapour Deposition ◽  
Synthetic Diamond ◽  
Free Exciton ◽  
Chemical Vapour ◽  
High Pressure High Temperature ◽  
Exciton Recombination

ABSTRACTA cathodoluminescence (CL) study of free- and bound-exciton recombination in high purity high pressure high temperature (HPHT) synthetic diamond is presented, including temperature dependence measurements of the free-exciton intensity and luminescence decaytime. The results are compared with those from device quality diamond produced using the chemical vapour deposition (CVD) process.

Anthracene fluorescence at low temperatures. I. Purified single crystals

1972 ◽  
Vol 25 (7) ◽  
pp. 1411 ◽  
Author(s):  
LE Lyons ◽  
LJ Warren
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Fluorescence Spectrum ◽  
Low Temperatures ◽  
Free Exciton ◽  
Deformation Bands ◽  
Exciton Emission ◽  
Polarized Emission ◽  
Impurity Bands ◽  
Phonon Structure

The low-temperature fluorescence spectrum of purified vapour-grown anthracene single crystals is presented and the free-exciton emission distinguished from a number of defect or impurity bands present even in the purest crystals. In assigning the observed bands the symmetry of the active vibrations and the origin of background fluorescence and deformation bands are discussed. The phonon structure in the region of the fluorescence origin was found to be almost completely b-polarized. Emission of electronic origin (25103 cm-1) was too weak to be observed. Polarization ratios of the principal vibronio bands at 5.6 K are given.

Das Spektrum der verzögerten Fluoreszenz in Anthracen-und Naphthalin-Kristallen

1970 ◽  
Vol 25 (5) ◽  
pp. 657-664 ◽  
Author(s):  
K. W. Benz ◽  
W. Hacker ◽  
H. C. Wolf
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Trap Depth ◽  
Delayed Fluorescence ◽  
Mixed Crystals ◽  
Pure Crystal ◽  
Guest Molecules ◽  
Prompt Fluorescence ◽  
Broad Continuum

The spectra of delayed fluorescence of high purity anthracene and naphthalene crystals have been measured as a function of temperature. Below 50 °K they are very different from the spectra of prompt fluorescence. The spectra of delayed fluorescence are the superposition of three types of subspectra: different X-traps-spectra, a broad continuum, and the pure crystal spectrum. From the temperature dependence of the relative intensities of these spectra one can measure the trap depth. - It is shown that the delayed fluorescence is at least 100 times more sensitive against traps and guest molecules than the prompt fluorescence. This is demonstrated using naphthalene-anthracene mixed crystals.

Temperature Dependence of the Elastic Constants of Gallium

1975 ◽  
Vol 53 (6) ◽  
pp. 581-582 ◽  
Author(s):  
T. J. Langill ◽  
J. Trivisonno
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Elastic Constants ◽  
High Purity ◽  
Acoustic Waves ◽  
Ultrasonic Pulse ◽  
Pulse Echo

A modified ultrasonic pulse overlap technique was employed to measure the single crystal elastic constants of high purity gallium from 4.2 K to 190 K. The results are compared with data obtained by a technique which employed direct electromagnetic generation of acoustic waves as well as with earlier pulse echo measurements.

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