Temperature dependence of the shallow-donor bound-exciton-emission linewidth in high-purity InP

1995 ◽  
Vol 52 (3) ◽  
pp. 1485-1488 ◽  
Author(s):  
R. Benzaquen ◽  
R. Leonelli ◽  
A. P. Roth
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Shallow Donor ◽  
Exciton Emission

Temperature dependence of the free-exciton-emission linewidth in high-purity InP

1995 ◽  
Vol 52 (4) ◽  
pp. R2273-R2276 ◽  
Author(s):  
R. Benzaquen ◽  
R. Leonelli ◽  
S. Charbonneau ◽  
P. J. Poole ◽  
A. P. Roth
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Free Exciton ◽  
Exciton Emission

Das Spektrum der verzögerten Fluoreszenz in Anthracen-und Naphthalin-Kristallen

1970 ◽  
Vol 25 (5) ◽  
pp. 657-664 ◽  
Author(s):  
K. W. Benz ◽  
W. Hacker ◽  
H. C. Wolf
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Trap Depth ◽  
Delayed Fluorescence ◽  
Mixed Crystals ◽  
Pure Crystal ◽  
Guest Molecules ◽  
Prompt Fluorescence ◽  
Broad Continuum

The spectra of delayed fluorescence of high purity anthracene and naphthalene crystals have been measured as a function of temperature. Below 50 °K they are very different from the spectra of prompt fluorescence. The spectra of delayed fluorescence are the superposition of three types of subspectra: different X-traps-spectra, a broad continuum, and the pure crystal spectrum. From the temperature dependence of the relative intensities of these spectra one can measure the trap depth. - It is shown that the delayed fluorescence is at least 100 times more sensitive against traps and guest molecules than the prompt fluorescence. This is demonstrated using naphthalene-anthracene mixed crystals.

Temperature Dependence of the Elastic Constants of Gallium

1975 ◽  
Vol 53 (6) ◽  
pp. 581-582 ◽  
Author(s):  
T. J. Langill ◽  
J. Trivisonno
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Elastic Constants ◽  
High Purity ◽  
Acoustic Waves ◽  
Ultrasonic Pulse ◽  
Pulse Echo

A modified ultrasonic pulse overlap technique was employed to measure the single crystal elastic constants of high purity gallium from 4.2 K to 190 K. The results are compared with data obtained by a technique which employed direct electromagnetic generation of acoustic waves as well as with earlier pulse echo measurements.

THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie
Keyword(s):  
Temperature Dependence ◽  
Energy Levels ◽  
Electronic States ◽  
Shallow Donor ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon ◽  
Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

scholarly journals Temperature Dependence of Work Hardening in High Purity Iron Single Crystals

1990 ◽  
Vol 31 (2) ◽  
pp. 118-128 ◽  
Author(s):  
J. Kumagai ◽  
S. Takaki ◽  
S. Suzuki ◽  
H. Kimura
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
High Purity ◽  
Work Hardening ◽  
Purity Iron ◽  
High Purity Iron
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