X-ray photoelectron diffraction from a free-electron-metal valence band: Evidence for hole-state localization

1990 ◽  
Vol 64 (22) ◽  
pp. 2683-2686 ◽  
Author(s):  
J. Osterwalder ◽  
T. Greber ◽  
S. Hüfner ◽  
L. Schlapbach
2002 ◽  
Vol 09 (02) ◽  
pp. 883-888 ◽  
Author(s):  
G. H. FECHER ◽  
J. BRAUN ◽  
A. OELSNER ◽  
CH. OSTERTAG ◽  
G. SCHÖNHENSE

The angular dependence of the circular dichroism in photoemission from Pt(111) was investigated for excitation with VUV and soft X-ray radiation. VUV excitation was used to probe band structure and the circular dichroism for valence band emission. The measurements are compared to full relativistic single step photoemission calculations. XPS was used to investigate the circular dichroism in emission from the 4f core level. In this case, the dichroism is induced by photoelectron diffraction. First results from single step core level calculations are compared to the experimental observations.


2020 ◽  
Vol 10 (2) ◽  
Author(s):  
Gregor Kastirke ◽  
Markus S. Schöffler ◽  
Miriam Weller ◽  
Jonas Rist ◽  
Rebecca Boll ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Kyo Nakajima ◽  
Takahiro Teramoto ◽  
Hiroshi Akagi ◽  
Takashi Fujikawa ◽  
Takuya Majima ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Shinichirou Minemoto ◽  
Takahiro Teramoto ◽  
Hiroshi Akagi ◽  
Takashi Fujikawa ◽  
Takuya Majima ◽  
...  

2002 ◽  
Vol 09 (02) ◽  
pp. 1321-1326 ◽  
Author(s):  
TOMOHIRO MATSUSHITA ◽  
TAKAYUKI MURO ◽  
YUJI SAITOH ◽  
TAKESHI NAKATANI ◽  
AKIRA SEKIYAMA ◽  
...  

Angle-resolved photoemission in the soft X-ray region has so far been used to study crystal (surface) structure by using photoelectron diffraction phenomena. In this energy region, the observation of the band structure was considered to be difficult, because the momentum of the incident photon cannot be negligible, the emitted electron is strongly influenced by the electron diffraction effects, and the cross section of the valence band is very small. We have performed the angle-resolved photoemission from the valence bands of highly oriented pyrolytic graphite by using the soft X-ray (hν=980 eV ) and successfully observed the band structure. The appearance of the structures of the band density of state is also discussed. Since the escape depth for the electrons with high kinetic energies is longer than ARUPS, this experimental method is better than the usual ARUPS in order to study the bulk band structures in solids.


1992 ◽  
Vol 70 (10-11) ◽  
pp. 799-802 ◽  
Author(s):  
Z. H. Lu ◽  
J.-M. Baribeau ◽  
T. E. Jackman

High-energy resolution X-ray photoelectron spectroscopy, with full width at half maximum of 0.41 eV for the Si 2p and of 0.54 eV for the Ge 3d, has been used to study the valence band offsets of different strained Ge layers grown on Si (100). The fractional volume changes in Ge epilayers have been measured by X-ray photoelectron diffraction and are used to correct the valence band maximum shifts caused by strained-induced spin-orbit splitting at the maxima. Band offset values of 0.80, 0.76, and 0.71 eV are found for Si/(Ge5Si5)/Si (100), Si/(Ge4Si4)/Si (100), and Si/(Ge0.5Si0.5)/Si (100) epilayers, respectively.


1996 ◽  
Vol 352-354 ◽  
pp. 823-827 ◽  
Author(s):  
P. Schieffer ◽  
C. Krembel ◽  
M.C. Hanf ◽  
D. Bolmont ◽  
G. Gewinner

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