Selection rules and dispersion of GaAs/AlAs multiple-quantum-well optical phonons studied by Raman scattering in right-angle, forward, and backscattering in-plane geometries

1995 ◽  
Vol 51 (20) ◽  
pp. 14448-14458 ◽  
Author(s):  
A. Fainstein ◽  
P. Etchegoin ◽  
M. P. Chamberlain ◽  
M. Cardona ◽  
K. Tötemeyer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Phonons ◽  
Selection Rules

POPULATION RELAXATION TIME OF OPTICAL PHONONS IN GaAs-AlAs MULTIPLE QUANTUM WELL STRUCTURES

1993 ◽  
Vol 07 (13n14) ◽  
pp. 887-893 ◽  
Author(s):  
K.T. TSEN ◽  
C. CHIA ◽  
J. WEST ◽  
H. MORKOC
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Relaxation Times ◽  
Experimental Results ◽  
Multiple Quantum ◽  
Optical Phonons ◽  
Quantum Well Structures ◽  
Population Relaxation

Population relaxation time of confined as well as interface optical phonons in a series of GaAs-AlAs multiple quantum well structures has been measured by picosecond time-resolved Raman spectroscopy. Our experimental results have shown that (1) within the experimental accuracy, the population relaxation time of confined optical phonons in GaAs-AlAs multiple quantum well structures is independent of GaAs well-width and is given by 6±1 ps at T=10 K; (2) the population relaxation times of both GaAs -like and AlAs -like interface optical phonons increase as GaAs well-width increases from 20 Å to 100 Å. These experimental results are compared with theoretical calculations recently carried out by Gupta and Ridley (Ref. 3).

Spin-flip Raman scattering by electrons bound to donors in CdTe/Cd1−xMnxTe multiple quantum well structures as a function of barrier composition

1994 ◽  
Vol 138 (1-4) ◽  
pp. 656-660 ◽  
Author(s):  
D. Wolverson ◽  
J.J. Davies ◽  
S.V. Railson ◽  
M.P. Halsall ◽  
D.E. Ashenford ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Spin Flip

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

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