Multiphonon Raman scattering resonant with two kinds of excitons in a (CdTe)2(ZnTe)4/ZnTe short-period-superlattice multiple quantum well

1993 ◽  
Vol 47 (19) ◽  
pp. 12937-12940 ◽  
Author(s):  
S. L. Zhang ◽  
Y. T. Hou ◽  
M. Y. Shen ◽  
J. Li ◽  
S. X. Yuan
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Short Period

Highly Strained (InAs)M/(GaAs)N Multiple Quantum Well Based Resonant Tunneling Diodes on GaAs (100) Substrates and Their Application in Optical Switching

1991 ◽  
Vol 228 ◽  
Author(s):  
R. M. Kapre ◽  
Kezhong Hu ◽  
Li Chen ◽  
S. Guha ◽  
A. Madhukar
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Optical Switching ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Bistable Switch ◽  
Tunneling Diode ◽  
Short Period ◽  
Highly Strained

ABSTRACTWe report the realization of (a) an optically bistable switch using a strained resonant tunneling diode (RTD) and (b) highly strained RTDs exhibiting simultaneously high peak current densities (Jp) and peak-to-valley current ratios (PVR) suitable for high-speed electronic switching. Both of these make use of RTDs with (InAs)M/(GaAs)N strained short period multiple quantum well regions with AlAs barriers in a triple-well, double barrier structure. For the former, high contrast ratio (20:1) and an on state reflectivity of 46.5 % has been obtained at room temperature in an optically bistable switch involving a strained InGaAs/GaAs (100) multiple quantum well based asymmetric Fabty-Perot reflection modulator, detector, and a strained RTD and a Si field effect transistor. For the latter, we have obtained a Jp of 125 kA/cm2 with a PVR of 4.7 at room temperature.

Spin-flip Raman scattering by electrons bound to donors in CdTe/Cd1−xMnxTe multiple quantum well structures as a function of barrier composition

1994 ◽  
Vol 138 (1-4) ◽  
pp. 656-660 ◽  
Author(s):  
D. Wolverson ◽  
J.J. Davies ◽  
S.V. Railson ◽  
M.P. Halsall ◽  
D.E. Ashenford ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Spin Flip

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

Raman and Photoluminescence Characterization of FIB Patterned AIGaAs/GaAs Multiple Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Ahn Goo Choo ◽  
Xuelong. Cao ◽  
Spirit Tlali ◽  
Howard E. Jackson ◽  
Peter Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pl Spectra ◽  
Spatially Resolved

AbstractRaman and photoluminescence (PL) spectra have been used to characterize A10.3Ga0.7As/GaAs multiple quantum well (MQW) structures that have been patterned by focused ion beam (FIB) implantation followed by rapid thermal annealing (RTA). Microprobe Raman scattering is used to identify the appropriate RTA and FIB implantation conditions that provide for removal of implantation-induced damage and for compositional intermixing. FIB patterned wire-like structures are characterized by spatially resolved PL spectra.

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