Picosecond Raman studies of the optical phonons in theAlxGa1−xAs layers of GaAs-AlxGa1−xAs multiple-quantum-well structures

1988 ◽  
Vol 37 (12) ◽  
pp. 7137-7139 ◽  
Author(s):  
K. T. Tsen ◽  
H. Morkoç
1993 ◽  
Vol 07 (13n14) ◽  
pp. 887-893 ◽  
Author(s):  
K.T. TSEN ◽  
C. CHIA ◽  
J. WEST ◽  
H. MORKOC

Population relaxation time of confined as well as interface optical phonons in a series of GaAs-AlAs multiple quantum well structures has been measured by picosecond time-resolved Raman spectroscopy. Our experimental results have shown that (1) within the experimental accuracy, the population relaxation time of confined optical phonons in GaAs-AlAs multiple quantum well structures is independent of GaAs well-width and is given by 6±1 ps at T=10 K; (2) the population relaxation times of both GaAs -like and AlAs -like interface optical phonons increase as GaAs well-width increases from 20 Å to 100 Å. These experimental results are compared with theoretical calculations recently carried out by Gupta and Ridley (Ref. 3).


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  

2007 ◽  
Vol 91 (23) ◽  
pp. 231103 ◽  
Author(s):  
S. Sadofev ◽  
S. Kalusniak ◽  
J. Puls ◽  
P. Schäfer ◽  
S. Blumstengel ◽  
...  

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