Interference of resonance Raman scattering by optical phonons and electronic-subband excitations inp-type modulation-doped multiple-quantum-well structures

1992 ◽  
Vol 45 (4) ◽  
pp. 1672-1687 ◽  
Author(s):  
F. Bechstedt ◽  
H. Gerecke ◽  
J. Kraus
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Resonance Raman ◽  
Multiple Quantum ◽  
Optical Phonons ◽  
Resonance Raman Scattering ◽  
Quantum Well Structures

Pressure-induced resonance raman scattering in Ga1-xInxAs/Ga1-yAlyAs multiple quantum well strucitjres

1991 ◽  
Vol 7 (1-6) ◽  
pp. 247-249
Author(s):  
G. A. Kourouklis ◽  
A. Jayamman ◽  
R. People ◽  
S. K. Sputz ◽  
D. L. Sivco ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Resonance Raman ◽  
Multiple Quantum ◽  
Resonance Raman Scattering

POPULATION RELAXATION TIME OF OPTICAL PHONONS IN GaAs-AlAs MULTIPLE QUANTUM WELL STRUCTURES

1993 ◽  
Vol 07 (13n14) ◽  
pp. 887-893 ◽  
Author(s):  
K.T. TSEN ◽  
C. CHIA ◽  
J. WEST ◽  
H. MORKOC
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Relaxation Times ◽  
Experimental Results ◽  
Multiple Quantum ◽  
Optical Phonons ◽  
Quantum Well Structures ◽  
Population Relaxation

Population relaxation time of confined as well as interface optical phonons in a series of GaAs-AlAs multiple quantum well structures has been measured by picosecond time-resolved Raman spectroscopy. Our experimental results have shown that (1) within the experimental accuracy, the population relaxation time of confined optical phonons in GaAs-AlAs multiple quantum well structures is independent of GaAs well-width and is given by 6±1 ps at T=10 K; (2) the population relaxation times of both GaAs -like and AlAs -like interface optical phonons increase as GaAs well-width increases from 20 Å to 100 Å. These experimental results are compared with theoretical calculations recently carried out by Gupta and Ridley (Ref. 3).

Spin-flip Raman scattering by electrons bound to donors in CdTe/Cd1−xMnxTe multiple quantum well structures as a function of barrier composition

1994 ◽  
Vol 138 (1-4) ◽  
pp. 656-660 ◽  
Author(s):  
D. Wolverson ◽  
J.J. Davies ◽  
S.V. Railson ◽  
M.P. Halsall ◽  
D.E. Ashenford ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Spin Flip
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