Monte Carlo study of the low-temperature mobility of electrons in a strained Si layer grown on aSi1−xGexsubstrate

1994 ◽  
Vol 49 (3) ◽  
pp. 1875-1881 ◽  
Author(s):  
Toshishige Yamada ◽  
H. Miyata ◽  
J.-R. Zhou ◽  
D. K. Ferry
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Study ◽  
Strained Si

scholarly journals Lithium oxide: a quantum-corrected and classical Monte Carlo study

2019 ◽  
Vol 21 (27) ◽  
pp. 14964-14972 ◽  
Author(s):  
M. Yu. Lavrentiev ◽  
N. L. Allan ◽  
C. Wragg
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Study ◽  
Unit Cell ◽  
Lithium Oxide ◽  
Quantum Corrections ◽  
Unit Cell Parameters ◽  
Cell Parameters ◽  
Theory And Experiment

Quantum corrections to unit cell parameters provide correct low-temperature limits and must be allowed for when comparing theory and experiment.

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport ◽  
Two Dimensional ◽  
Strained Si ◽  
Full Band

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

Strained Si/SiGe Heterostructures at Low Temperatures. A Monte Carlo Study

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-87-C3-92
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva ◽  
J. E. Carceller ◽  
P. Cartujo
Keyword(s):  
Monte Carlo ◽  
Low Temperatures ◽  
Monte Carlo Study ◽  
Strained Si

Two-Component Catalysts for Low-Temperature CO Oxidation: A Monte Carlo Study

1993 ◽  
Vol 141 (1) ◽  
pp. 219-238 ◽  
Author(s):  
R.K. Herz ◽  
A. Badlani ◽  
D.R. Schryer ◽  
B.T. Upchurch
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Co Oxidation ◽  
Monte Carlo Study ◽  
Two Component ◽  
Low Temperature Co Oxidation

MONTE CARLO STUDY OF LOW-TEMPERATURE PROPERTIES OF QUANTUM FERROMAGNETIC XY MODEL ON THE TRIANGULAR LATTICE

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1389-C8-1390
Author(s):  
Masako Takasu ◽  
Seiji Miyashita ◽  
Masuo Suzuki ◽  
Yasumasa Kanada
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Triangular Lattice ◽  
Monte Carlo Study ◽  
Xy Model
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