Strained Si/SiGe Heterostructures at Low Temperatures. A Monte Carlo Study

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-87-C3-92
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva ◽  
J. E. Carceller ◽  
P. Cartujo
Keyword(s):  
Monte Carlo ◽  
Low Temperatures ◽  
Monte Carlo Study ◽  
Strained Si

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport ◽  
Two Dimensional ◽  
Strained Si ◽  
Full Band

Slow coarsening ofB2-ordered domains at low temperatures: A kinetic Monte Carlo study

2000 ◽  
Vol 62 (5) ◽  
pp. 3142-3152 ◽  
Author(s):  
D. Le Floc’h ◽  
P. Bellon ◽  
M. Athènes
Keyword(s):  
Monte Carlo ◽  
Low Temperatures ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Study

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

Monte Carlo study of the statistics of electron capture by shallow donors in silicon at low temperatures

1995 ◽  
Vol 51 (20) ◽  
pp. 14147-14151 ◽  
Author(s):  
A. Palma ◽  
J. A. Jiménez-Tejada ◽  
A. Godoy ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Monte Carlo ◽  
Electron Capture ◽  
Low Temperatures ◽  
Monte Carlo Study ◽  
Shallow Donors

Monte Carlo study of the low-temperature mobility of electrons in a strained Si layer grown on aSi1−xGexsubstrate

1994 ◽  
Vol 49 (3) ◽  
pp. 1875-1881 ◽  
Author(s):  
Toshishige Yamada ◽  
H. Miyata ◽  
J.-R. Zhou ◽  
D. K. Ferry
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Monte Carlo Study ◽  
Strained Si
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