A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGexchannel MOSFETs

1996 ◽  
Vol 80 (9) ◽  
pp. 5121-5128 ◽  
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López‐Villanueva ◽  
J. E. Carceller
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Transport Properties ◽  
High Performance ◽  
Monte Carlo Study ◽  
Strained Si ◽  
Electron Transport Properties

Monte Carlo calculation of electron transport properties of bulk AlN

1998 ◽  
Vol 83 (3) ◽  
pp. 1446-1449 ◽  
Author(s):  
J. D. Albrecht ◽  
R. P. Wang ◽  
P. P. Ruden ◽  
M. Farahmand ◽  
K. F. Brennan
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Transport Properties ◽  
Monte Carlo Calculation ◽  
Electron Transport Properties

scholarly journals A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 213-216
Author(s):  
Mahbub Rashed ◽  
W.-K. Shih ◽  
S. Jallepalli ◽  
R. Zaman ◽  
T. J. T. Kwan ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Monte Carlo Study ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Bulk Materials ◽  
Strained Si ◽  
Mc Simulation

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

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