Tensile-strain effects in quantum-well and superlattice band structures

1994 ◽  
Vol 49 (15) ◽  
pp. 10402-10416 ◽  
Author(s):  
Arvind Baliga ◽  
Dhrupad Trivedi ◽  
Neal G. Anderson
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Band Structures ◽  
Strain Effects

Band structures of one-dimensional buckled Arsenene nanoribbons: Strain and quantum size modulations

2017 ◽  
Vol 31 (36) ◽  
pp. 1750341 ◽  
Author(s):  
Yanwei Luo ◽  
Yuxiao Li ◽  
Peng Guo ◽  
Weiguang Chen ◽  
Yanan Tang ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Tensile Strain ◽  
Indirect Transition ◽  
Band Structures ◽  
Strain Effects ◽  
One Dimensional ◽  
Quantum Size ◽  
Direct Band ◽  
Band Transition

In this work, we use first-principles methods to study the strain effects on the band structures of the armchair and zigzag arsenene nanoribbons (A-AsNRs and Z-AsNRs), as well as considering different ribbon widths. The results show that the band gap for each considered arsenene nanoribbons can be decreased when the size is increased. Moreover, strain can also reduce effectively the band gap of AsNRs. Interestingly, for A-AsNRs case, the indirect to direct band transition can be obtained under the tensile strain. In comparision, the direct–indirect transition only occurs under some strain ranges for zigzag AsNRs (Z-AsNRs).

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Strain effects on the band structures of beta -SiC

1993 ◽  
Vol 5 (7) ◽  
pp. 883-890 ◽  
Author(s):  
Lu Wenchang ◽  
Zhang Kaiming ◽  
Xie Xide
Keyword(s):  
Band Structures ◽  
Strain Effects

Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain

2008 ◽  
Vol 104 (10) ◽  
pp. 103537 ◽  
Author(s):  
C. M. N. Mateo ◽  
J. J. Ibañez ◽  
J. G. Fernando ◽  
J. C. Garcia ◽  
K. Omambac ◽  
...  
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Bulk Gaas
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