High internal electric fields and built-in strain effects in ZnO∕Mg[sub x]Zn[sub 1-x]O and Zn[sub 1-y]O∕ ZnO quantum well lasers

2012 ◽  
Author(s):  
N. Tari ◽  
K. Zitouni ◽  
A. Kadri ◽  
F. Benharrats
1992 ◽  
Vol 4 (8) ◽  
pp. 826-828 ◽  
Author(s):  
H. Yasaka ◽  
R. Iga ◽  
Y. Noguchi ◽  
Y. Yoshikuni

1996 ◽  
Vol 421 ◽  
Author(s):  
M. Suzuki ◽  
T. Uenoyama

AbstractSubband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k.p theory. First-principles calculations are used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance.


1996 ◽  
Vol 68 (12) ◽  
pp. 1595-1597 ◽  
Author(s):  
A. S. Pabla ◽  
J. Woodhead ◽  
E. A. Khoo ◽  
R. Grey ◽  
J. P. R. David ◽  
...  

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  

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