Compressive and tensile strain effects on hole tunneling in an InGaAs/AlInAs asymmetrical coupled quantum well

1993 ◽  
Vol 74 (12) ◽  
pp. 7294-7301 ◽  
Author(s):  
P. A. Chen ◽  
C. Y. Chang ◽  
C. Juang
1994 ◽  
Vol 49 (15) ◽  
pp. 10402-10416 ◽  
Author(s):  
Arvind Baliga ◽  
Dhrupad Trivedi ◽  
Neal G. Anderson

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.


1996 ◽  
Vol 361-362 ◽  
pp. 401-405 ◽  
Author(s):  
K. Unterrainer ◽  
J.N. Heyman ◽  
K. Craig ◽  
B. Galdrikian ◽  
M.S. Sherwin ◽  
...  

1996 ◽  
Vol 53 (4) ◽  
pp. 2026-2033 ◽  
Author(s):  
T. Stroucken ◽  
A. Knorr ◽  
P. Thomas ◽  
S. W. Koch

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