Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain

2008 ◽  
Vol 104 (10) ◽  
pp. 103537 ◽  
Author(s):  
C. M. N. Mateo ◽  
J. J. Ibañez ◽  
J. G. Fernando ◽  
J. C. Garcia ◽  
K. Omambac ◽  
...  
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Bulk Gaas

Tensile-strain effects in quantum-well and superlattice band structures

1994 ◽  
Vol 49 (15) ◽  
pp. 10402-10416 ◽  
Author(s):  
Arvind Baliga ◽  
Dhrupad Trivedi ◽  
Neal G. Anderson
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Band Structures ◽  
Strain Effects

TEMPERATURE AND HYDROSTATIC PRESSURE DEPENDENCE OF SUBBAND STRUCTURE IN GaAs/AlxGa1−xAs MULTIPLE QUANTUM WELL

1990 ◽  
Vol 04 (14) ◽  
pp. 917-920 ◽  
Author(s):  
Y. FU
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Quantum Wells ◽  
Pressure Dependence ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Bulk Gaas ◽  
Pressure Coefficients ◽  
Subband Energy ◽  
Subband Structure

The temperature and hydrostatic pressure dependence of GaAs/AlxGa1−xAs multiple quantum well subband structures has been examined theoretically. Such effects on the subband energy measured from the corresponding band optimum are negligible, and therefore, the temperature and the hydrostatic pressure coefficients of these multiple quantum wells are dominated by those coefficients of the bulk GaAs bandgap.

Characterization of an Asymmetric Triangular Multiple Quantum Well, by Variable Angle Spectroscopic Ellipsometry

1989 ◽  
Vol 160 ◽  
Author(s):  
Craig M. Herzinger ◽  
Paul G. Snyder ◽  
John A. Woollam ◽  
Keith Evans ◽  
C.E. Stutz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Multiple Quantum Well ◽  
Gaas Layer ◽  
Multiple Quantum ◽  
Bulk Gaas ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry

AbstractVariable angle spectroscopic ellipsometry (VASE) was used to characterize a 20 period GaAs/Al(x)Ga(1-x)As multiple quantum well structure, grown by molecular beam epitaxy. The barriers were nominally 200 Å Al(.25)Ga(.75)As, and the well regions were grown to approximate a linearly graded composition, from x=0 to x=0.25, with total well width 200 Å. VASE data in the E1, E1,+Δ1. region were analyzed using four different models. It was founcЃ that the dielectric function of the cap GaAs layer was shifted to higher energy with respect to the bulk GaAs dielectric function.

Effects of tensile strain and substrate off-orientation on the growth of multiple quantum well structures by CBE

1997 ◽  
Vol 175-176 ◽  
pp. 1081-1086 ◽  
Author(s):  
T. Marschner ◽  
R.T.H. Rongen ◽  
M.R. Leys ◽  
F.D. Tichelaar ◽  
H. Vonk ◽  
...  
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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