Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

1993 ◽  
Vol 48 (8) ◽  
pp. 5345-5353 ◽  
Author(s):  
P. Asoka-Kumar ◽  
H.-J. Gossmann ◽  
F. C. Unterwald ◽  
L. C. Feldman ◽  
T. C. Leung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Point defects in III–V materials grown by molecular beam epitaxy at low temperature

1993 ◽  
Vol 22 (1) ◽  
pp. 16-22 ◽  
Author(s):  
P. Hautojärvi ◽  
J. Mäkinen ◽  
S. Palko ◽  
K. Saarinen ◽  
C. Corbel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4726-4731 ◽  
Author(s):  
Mikihiro Yokozeki ◽  
Hiroo Yonezu ◽  
Takuto Tsuji ◽  
Kazuya Aizawa ◽  
Naoki Ohshima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Atomic Hydrogen ◽  
Molecular Beam

Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy

1984 ◽  
Vol 44 (2) ◽  
pp. 234-236 ◽  
Author(s):  
D. Streit ◽  
R. A. Metzger ◽  
F. G. Allen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy
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