Summary Abstract: Lateral solid phase epitaxy of silicon on SiO2 in a silicon molecular beam epitaxy system

1985 ◽  
Vol 3 (2) ◽  
pp. 739 ◽  
Author(s):  
K. F. Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Epitaxy System

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

1993 ◽  
Vol 48 (8) ◽  
pp. 5345-5353 ◽  
Author(s):  
P. Asoka-Kumar ◽  
H.-J. Gossmann ◽  
F. C. Unterwald ◽  
L. C. Feldman ◽  
T. C. Leung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy

1984 ◽  
Vol 44 (2) ◽  
pp. 234-236 ◽  
Author(s):  
D. Streit ◽  
R. A. Metzger ◽  
F. G. Allen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

scholarly journals A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines

2012 ◽  
Vol 83 (10) ◽  
pp. 105112 ◽  
Author(s):  
T. Slobodskyy ◽  
P. Schroth ◽  
D. Grigoriev ◽  
A. A. Minkevich ◽  
D. Z. Hu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Epitaxy System ◽  
Synchrotron Beamlines

Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system

1989 ◽  
Vol 95 (1-4) ◽  
pp. 427-430 ◽  
Author(s):  
A. Guivarc'h ◽  
J. Caulet ◽  
B. Guenais ◽  
Y. Ballini ◽  
R. Guérin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy System
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