Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy

1984 ◽  
Vol 44 (2) ◽  
pp. 234-236 ◽  
Author(s):  
D. Streit ◽  
R. A. Metzger ◽  
F. G. Allen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

1993 ◽  
Vol 48 (8) ◽  
pp. 5345-5353 ◽  
Author(s):  
P. Asoka-Kumar ◽  
H.-J. Gossmann ◽  
F. C. Unterwald ◽  
L. C. Feldman ◽  
T. C. Leung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Point Defects ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Direct-Gap Photoluminescence from a Si-Ge Multilayer Super Unit Cell Grown on Si0.4Ge0.6

2018 ◽  
Author(s):  
David J. Lockwood ◽  
N.L. Rowell ◽  
L. Favre ◽  
A. Ronda ◽  
I. Berbezier
Keyword(s):  
Molecular Beam ◽  
Light Emission ◽  
Solid Phase ◽  
Unit Cell ◽  
Emission Lines ◽  
Solid Phase Epitaxy ◽  
Light Emitters ◽  
Band Gap Engineering ◽  
Optical Fiber Applications ◽  
Weak Peak

Both Si and Ge possess indirect band gaps, which makes them very inefficient light emitters. One way to overcome this limitation is through band gap engineering. In this regard, M. d’Avezac et al. [Phys. Rev. Lett., 108, 027401 (2012)] predicted that a strained SiGe2Si2Ge2SiGen super unit cell on Si0.4Ge0.6 would have a direct and dipole-allowed gap of 0.863 eV, which is ideally suited for optical fiber applications. Here we report on the epitaxial growth of such a structure and its optical properties, for which purpose two similar samples were prepared by molecular beam epitaxy and solid phase epitaxy. Photoluminescence (PL) spectra were obtained at low temperatures (6–25 K) with excitation at wavelengths of 405 and 458 nm, selected to emphasize the light emission from the sample superstructure. A strong low-energy PL quadruplet is seen, with peaks near 727, 758, 792 and 822 meV at 6 K, together with a much weaker peak at 871 MeV. The ratio of intensities of the strong and weak peaks is the same in both samples. The weak peak at 871 meV is assigned to the dipole-allowed direct-gap transition associated with the super unit cell. The four strong peaks are attributed to dislocation related emission lines of the thick relaxed Si0.4Ge0.6 transition layer on Si.

Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

2006 ◽  
Vol 928 ◽  
Author(s):  
Andreas Fissel ◽  
Dirk Kuehne ◽  
Eberhard Bugiel ◽  
H. Joerg Osten
Keyword(s):  
Low Temperatures ◽  
Negative Differential Resistance ◽  
Molecular Beam ◽  
Solid Phase ◽  
Differential Resistance ◽  
Solid Phase Epitaxy ◽  
Double Barrier ◽  
Single Crystalline ◽  
Novel Approach ◽  
Sharp Interfaces

ABSTRACTDouble-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.

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