Properties of the As-related shallow acceptor level in heteroepitaxial ZnSe grown by molecular-beam epitaxy

1993 ◽  
Vol 48 (15) ◽  
pp. 10885-10892 ◽  
Author(s):  
Y. Zhang ◽  
B. J. Skromme ◽  
S. M. Shibli ◽  
M. C. Tamargo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Acceptor Level ◽  
Shallow Acceptor ◽  
Shallow Acceptor Level

Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

2014 ◽  
Vol 23 (9) ◽  
pp. 097101 ◽  
Author(s):  
M. Asghar ◽  
K. Mahmood ◽  
M. A. Hasan ◽  
I. T. Ferguson ◽  
R. Tsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Film ◽  
Acceptor Level ◽  
Deep Acceptor ◽  
Deep Acceptor Level

Shallow acceptor level in GaAs crystals resulting from Cu diffusion

1964 ◽  
Vol 25 (12) ◽  
pp. 1329-1338 ◽  
Author(s):  
C.S. Fuller ◽  
H.W. Allison ◽  
K.B. Wolfstirn
Keyword(s):  
Acceptor Level ◽  
Shallow Acceptor ◽  
Shallow Acceptor Level

Shallow acceptor level in GaAs crystals resulting from Cu diffusion

1964 ◽  
Vol 2 (8) ◽  
pp. iv
Author(s):  
C.S. Fuller ◽  
H.W. Allison ◽  
K.B. Wolfstirn
Keyword(s):  
Acceptor Level ◽  
Shallow Acceptor ◽  
Shallow Acceptor Level

Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
I. Szafranek ◽  
M.A. Plano ◽  
M.J. McCollum ◽  
S.L. Jackson ◽  
S.A. Stockman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Exciton ◽  
Donor Concentration ◽  
Sharp Line ◽  
Exciton Transition ◽  
Shallow Acceptor ◽  
Molecular Beam Epitaxial ◽  
Compensation Ratio ◽  
Transition Change

AbstractA shallow acceptor-like defect labeled “A” is frequently incorporated in molecular beam epitaxial GaAs. We report here anomalous photoluminescence effects that are induced by this defect. With increasing concentration of the “A” defect: (1) neutral and ionized donor-bound exciton peaks disappear almost completely even for donor concentration as high as 7×1014 cm-3 and compensation ratio ND/NA≈0.3; (2) a new, sharp line emerges at 1.5138 eV, and (3) the relative intensity and line shape of the free exciton transition change dramatically. These observations are discussed in the perspective of previous reports, where similar effects were, in our opinion, misinterpreted.

Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

1998 ◽  
Vol 13 (10) ◽  
pp. 1130-1133 ◽  
Author(s):  
F J Sánchez ◽  
F Calle ◽  
M A Sánchez-García ◽  
E Calleja ◽  
E Muñoz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Experimental Evidence ◽  
Molecular Beam ◽  
Shallow Acceptor

Photoluminescence of the residual shallow acceptor in InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy

1989 ◽  
Vol 70 (5) ◽  
pp. 505-509 ◽  
Author(s):  
Zhong-Ying Xu ◽  
Ji-Zong Xu ◽  
T.G. Andersson ◽  
Zong-Gui Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Shallow Acceptor

Optical and Electrical Characterizations of AlxGa1−xSb

1987 ◽  
Vol 94 ◽  
Author(s):  
N. Kitamura ◽  
H. Yamamoto ◽  
K. Higuchi ◽  
Y. Maeda ◽  
A. Usami ◽  
...  
Keyword(s):  
Stoichiometric Composition ◽  
Acceptor Level ◽  
Native Defect ◽  
Shallow Acceptor ◽  
Native Defects ◽  
Complex Defect ◽  
Shallow Acceptor Level ◽  
Epma Measurement ◽  
Defect Levels ◽  
Electrical Characterizations

ABSTRACTThe LPE grown AlxGa1−xSb was investigated by means of TEM, a carrier profiler and PL. The TEM image showed the dissociated 60° dislocations and Lomer-Cottrell sessile dislocation formed by the reaction of two dissociated 60° dislocations on different {111} planes. The EPMA measurement showed that Sb concentrations at the dislocation were lower than the stoichiometric composition. The epi-layer grown at 400°C had a relatively uniform carrier concentration of ∼7×1016cm−3. The PL spectra showed five emission peaks in 0≦×≦0.29. One shallow acceptor level and two native defect levels were introduced to interpret these PL emissions. The shallow acceptor level of Ev+∼30meV may be due to the defect of VGaGaSb. The native defects introduce two levels of EΓ1 - ∼90meV and EL1 - ∼160meV. The defect levels may be related to the complex defect of the Sb vacancy.

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