Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
I. Szafranek ◽  
M.A. Plano ◽  
M.J. McCollum ◽  
S.L. Jackson ◽  
S.A. Stockman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Exciton ◽  
Donor Concentration ◽  
Sharp Line ◽  
Exciton Transition ◽  
Shallow Acceptor ◽  
Molecular Beam Epitaxial ◽  
Compensation Ratio ◽  
Transition Change

AbstractA shallow acceptor-like defect labeled “A” is frequently incorporated in molecular beam epitaxial GaAs. We report here anomalous photoluminescence effects that are induced by this defect. With increasing concentration of the “A” defect: (1) neutral and ionized donor-bound exciton peaks disappear almost completely even for donor concentration as high as 7×1014 cm-3 and compensation ratio ND/NA≈0.3; (2) a new, sharp line emerges at 1.5138 eV, and (3) the relative intensity and line shape of the free exciton transition change dramatically. These observations are discussed in the perspective of previous reports, where similar effects were, in our opinion, misinterpreted.

Band Edge Optical Absorption of Molecular Beam Epitaxial GaSb Grown on Semi-Insulating GaAs Substrate

1993 ◽  
Vol 325 ◽  
Author(s):  
M. Shah ◽  
M.O. Manasreh ◽  
R. Kaspi ◽  
M. Y. Yen ◽  
B. A. Philips ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Free Exciton ◽  
Buffer Layers ◽  
Band Edge ◽  
Exciton Absorption ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates

AbstractThe optical absorption of the band edge of GaSb layers grown on semi-insulating GaAs substrates by the molecular beam epitaxy (MBE) technique is studied as a function of temperature. A free exciton absorption peak at 0.807 eV was observed at 10 K. The free exciton line is observed in either thick samples (5μm thick) or samples with ∼0.1 μm thick AlSb buffer layers. The latter samples suggest that the AlSb buffer layer is very effective in preventing some of the dislocations from propagating into the MBE GaSb layers. The fitting of the band gap of the GaSb layers as a function of temperature gives a Debye temperature different than that of the bulk GaSb calculated from the elastic constants.

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Structural Defects ◽  
Donor Concentration ◽  
Ion Milling ◽  
Electrical And Optical Properties ◽  
Gaas Substrates ◽  
Cdte Buffer

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
S. Fukatsu ◽  
K. Fujita ◽  
H. Yaguchi ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Lower Limit ◽  
Molecular Beam ◽  
Growth Direction ◽  
High Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

1990 ◽  
Vol 68 (2) ◽  
pp. 741-754 ◽  
Author(s):  
I. Szafranek ◽  
M. A. Plano ◽  
M. J. McCollum ◽  
S. A. Stockman ◽  
S. L. Jackson ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Shallow Acceptor ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Acceptor Defect

Studies Of Photoreflectance in Cd1−x MnxTe/Cd1−yMnyTe Superlattices

1999 ◽  
Vol 588 ◽  
Author(s):  
Chenjia Chen ◽  
Xuezhong Wang ◽  
Haitao Li ◽  
Xiaogan Liang ◽  
Guangyu Chai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Confinement ◽  
Molecular Beam ◽  
Envelope Function ◽  
Exciton Transition ◽  
Transition Energies ◽  
Gaas Substrates ◽  
Quantum Confinement Effects ◽  
Measurement Results ◽  
Good Agreement

AbstractPhotoreflectance spectroscopy has been peformed on a series of Cd1−xMnxTe/Cd1−yMnyTe superlattices. Samples were grown on (001) GaAs substrates by molecular-beam epitaxy with different barriers (x=0.3 to 0.8) and wells (y=0 to 0.01). After taking into consideration the strain-induced and quantum confinement effects, the exciton transition energies of the heavy and light holes can be determined using envelope-function calculations. The calculations are in good agreement with the photoreflectance measurement results. These results show that photoreflectance is a powerful probe for the study of quantized state structures in superlattices.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

Properties of the As-related shallow acceptor level in heteroepitaxial ZnSe grown by molecular-beam epitaxy

1993 ◽  
Vol 48 (15) ◽  
pp. 10885-10892 ◽  
Author(s):  
Y. Zhang ◽  
B. J. Skromme ◽  
S. M. Shibli ◽  
M. C. Tamargo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Acceptor Level ◽  
Shallow Acceptor ◽  
Shallow Acceptor Level

Development of Anisotropic GaAs (001) Surface Morphology During Molecular Beam Epitaxial Growth

1993 ◽  
Vol 317 ◽  
Author(s):  
Allan J. Pidduck ◽  
G.W. Smith ◽  
A.M. Keir ◽  
C.R. Whitehouse
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Step Flow ◽  
Molecular Beam Epitaxial ◽  
Amplitude Increase ◽  
Roughness Amplitude ◽  
Step Density ◽  
Molecular Beam Epitaxial Growth ◽  
Step Flow Growth

ABSTRACTWe have studied the development of a microscopically ridged [110] Morphology during (001) GaAs Molecular beam epitaxy, as a function of layer thickness and growth temperature. The ridge slopes are consistent with the [110] separation required to incorporate a majority of adatoms by step-flow growth. Thus step-flow can be a dominant growth mode even on nominally on-axis (singular) substrates. With increasing epilayer thickness, the ridge slopes, and surface step density, remain approximately constant, while the ridge spacings, and therefore roughness amplitude, increase steadily.

Properties of Chlorine-Doped Zinc Selenide Grown by Molecular Beam Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
J. Ren ◽  
K.A. Bowers ◽  
J.W. Cook ◽  
J.F. Schetzina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Zinc Selenide ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Edge Luminescence ◽  
Compensation Ratio ◽  
Substrate Temperatures ◽  
Bright Blue

ABSTRACTZnSe:Cl epilayers have been grown on (100) GaAs by MBE using a Zn to Se beam flux ratio of 2:1 and substrate temperatures as low as 225 °C. The ZnSe:Cl epilayers are highly conducting and exhibit bright blue-violet edge luminescence at 300 K. A mobility of 2480 cm2 /V-s at 40 K was measured for an n-type ZnSe:CI film that was Cl-doped to ∼2.3×1017 cm−3 and for which a compensation ratio (NA/ND) of ∼3% was calculated. Carrier concentrations as large as 6.7×1018cm−3 were obtained by increasing the temperature of the MBE oven containing the C1 dopant.

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